EE319: Advanced Nanoelectronic Devices and Technology
Course syllabus

Simon M. Sze, Professor of Electrical Engineering (consulting), Stanford University
e-mail: simonsze@faculty.nctu.edu.tw

Yoshio Nishi, Professor of Electrical Engineering (research), CIS 103
Stanford University
e-mail:nishiy@stanford.edu
http://nanodevice.stanford.edu

Course Objectives

¡EProvide historical perspectives of device physics and technology, followed by recent advances in materials science, device structures, and process technology to extend VLS1 device scaling towards atomistic and quantum-mechanical physics boundaries
¡ETopics will include mobility-enhancement techniques, nano-materials/structures, 3D FETs, gate-wrap-around FETs, nonvolatile memory phenomena and devices by which future of device physics and technology will be discussed.
¡ECritical evaluation of these approaches based on their capability to meet the challenges of reducing leakage currents and minimizing variability in electrical characteristics for logic and volatile-memory devices, and nonvolatile-memory devices.
¡EStudents will be able to understand the leading edge device physics and technology and their trends through a large number of conference publications and technical papers to be studied.

Topics to be covered

¡EOverview: Old but still new
¡EPhysics and Properties of Semiconductors-A Review

Crystal structure
Energy bands and energy gap
Carrier concentration at thermal equilibrium
Carrier transport phenomena
Phonon, optical and thermal properties
Heterojunctions and nanostructures
Basic equations and examples

¡E3D Structures and Integrations

Physics of interfaces and surface quantization
SOS to SOI
Effect of strain on transport properties
Quantum confined structures

¡EResistance Change Phenomena and Nonvolatile Memory Devices beyond Flash Memory

Hysteresis, where are they coming?
Resistance change memories?

¡ENanoelectronic Devices

Nanowires and devices
Nanotubes and devices
Physics of metal-insulator-semiconductor structures and the first principle based modeling and simulation

¡ETopics from Recent Conferences and Industrial Perspectives
References
¡ER.A. Smith, Semiconductors, 2nd edition, Cambridge University Press, London, 1978
¡ES.M.Sze, Ed, High Speed Semicondutor Devices, Wiley, New York, 1990
¡ES.M. Sze, Ed, Modern Semiconductor Device Physics, Wiley, New York
¡EK. Seeger, Semiconductor Physics, 7th Ed, Springer-Verlag, Berlin,
¡EC.Y. Chang and S.M. Sze, Eds, ULSI Devices, Wiley New York
¡ES.M. Sze, Semiconductor Devices: Physics and Technology, 2nd Ed. Wiley, New York, 2002
¡ES.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd Ed, Wiley, Hoboken, 2007
¡EH. Iwai, Y. Nishi, M.S. Shur, H. Wong, Frontier in Electronics, World Scientific, 2004
¡ER. D. Doering and Y. Nishi, Handbook of Semiconductor Manufacturing Technology, CRC Press, Boca Raton 2007

Course files:

Course notes
Course lecture 1


 

   
                                           
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