Yoshio Nishi

Professor of Electrical Engineering
Professor of Materials Science and Engineering

Research Areas
  • MOS device physics and technology
  • Nanoscale devices
  • 3 dimensional integrated circuits
  • Nonvolatile memory
Education Specific Research Interests
  • Metal gate work function science and engineering
  • High mobility channel and transport
  • Nanowire based memory
  • Resistance Change Memory
  • Vertical MOS devices
  • Bio FETs
  • Solar cells and dye sensitization
Special Projects Other Information
  • Director, Stanford Nano Fabrication facility
  • Research Director, Center for Integrated Systems
  • On Stanford faculty since 2002
  • IEEE fellow
  • 1995 IEEE Jack Morton Award
  • 2002 Robert Noyce Medal
  • Formerly senior VP and director of R&D, Texas Instruments
  • Distinguished career at Toshiba and Hewlett Packard

Office: CIS #103, 420 Via Palou
Stanford University,
Stanford CA 94305-4070
Phone: (650) 723-9508
Fax: (650) 725-0991
Email: yoshio.nishi@stanford.edu
Group Web Page: http://nanodevice.stanford.edu
Administrative Assistant:

Gabrielle Brits (650) 724-0068
Sandra Eisensee (650) 723-3113

List of selected publications:

1. N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D.G. Schlom, M.B. Santos, J.S. Harris, and Y. Nishi, "High-Indium-Content InGaAs Metal-Oxide-Semiconductor Capacitor with Amorphous LaAlO3 Gate DielectricĦL accepted for Applied Physics Letters (2007)
2. B. C. Paul, R. Tu, S. Fujita, M. Okajima, T. Lee, and Y. Nishi, "A Circuit Compatible Analytical Device Model for Nanowire FET," IEEE Trans. Electron Devices, Vol. 54, No. 7, pp. 1637-1644, July 2007
3. A. K. Chao, P. Kapur, E. Morifuji, K. C. Saraswat, Y. Nishi,ĦLElectro-Thermally Coupled Power Optimization for Future Transistors and Its Applications,ĦL IEEE Trans Electron Devices, Vol. 54, No. 7, pp. 1696-1704, July 2007.
4. E. Morifuji, D. Patil, M. Horowitz and Y. Nishi, Power Optimization for SRAM and Its ScalingĦL IEEE Trans. Electron Devices Vol.54 No.4, pp715-722, April 2007
5. K. Tsunoda, Y. Fukuzumi, J.R. Jameson, Z. Wang, P.B. Griffin, and Y. Nishi, Bipolar Resistive Switching in Polycrystalline TiO2 Films,ĦL Applied Physics Letters Vol.90, pp.113501-1 V 113501-3, March, 2007.
6. Z. Wang, P.B. Griffin, J. McVittie, S.Wong, P. C. McIntyre, and Y. Nishi, "Resistive Switching Mechanism in ZnxCd1-xS Nonvolatile Memory Devices" IEEE Electron Device Letters Vol.28, pp14-16, January, 2007.
7. J.R. Jameson, Y. Fukuzumi, K. Tsunoda, P.B. Griffin, G.I. Meijer, and Y. Nishi, Field-Programmable Rectification in Rutile TiO2 Crystals,!ĦL submitted to Applied Physics Letters 2006.
8. B. B. Triplett, J. P. T. Chen, Y. Nishi, "Electron Spin Resonance Study of As-Deposited and Annealed (HfO2)x(SiO2)1-x? High-k Dielectrics on Si," Journal of Applied Physics, Vol.101, pp.013703-5 January, 2007
9. J.R. Jameson, W. Harrison, P.B. Griffin, J.D. Plummer, and Y. Nishi, ?Semiclassical Model of Dielectric Relaxation in Glasses,!ĦL Journal of Applied Physics Vol.100 (12), pp124104-1 V 124104-20 December, 2006
10. S. Park, B. Magyari-Kope, L. Colombo, Y. Nishi, and K. Cho, "First Principles Study of Al-Ni Bi-layer Work Function on SiO2ĦL, submitted to Journal of Applied Physics, December 2006
11. M. Makarova, J.Vuckovic, H. Sanda, and Y. Nishi, "Silicon-Based Photonic Crystal Nanocavity Light Emitters!ĦL Appl. Phys. Letters Vol. 89, pp221101, November, 2006.
12. H. Jagannathan, Jungyup Kim, Michael Deal, Michael Kelly, Yoshio Nishi, "Halide Passivation of Germanium Nanowires,ĦL ECS Transactions, Volume 3, Issue 7, pp. 1175-1180, October 2006.
13. H. Jagannathan, Y. Nishi, M.Reuter, M. Copel, E. Tutuc, and S. Guha, "Effect of Oxide Overlayer Formation on the Growth of Gold Catalyzed Epitaxial Silicon Nanowires,ĦL Applied Physics Letters, Vol. 88, pp103113-1,October, 2006.
14.J.R. Jameson, P.B. Griffin, J.D. Plummer, and Y. Nishi, "Charge Trapping in High-k Gate Stacks Due to the Bilayer Structure Itself" IEEE Trans. Electron Devices Vol.53, No.8, pp1858-1867, August 2006.
15. Y. Lu, S. Bangsaruntip, X. Wang, L. Zhang, Y. Nishi, and H. Dai., "DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High K Dielectrics for Nanotube Transistors with 60 mV/Decade Switching", Journal of the American Chemical Society, Vol. 128, No. 11, pp. 3518-3519, November, 2006.
16. T. Krishnamohan, Z. Krivokapic, K.Uchida, Y.Nishi, and K.Saraswat, "High-Mobility Ultrathin Strained Ge MOSFETs on Bulk and SOI with Low Band-to-Band Tunneling Leakage: Experiments,ĦL IEEE Trans. Electron Devices, 53, pp. 990-999, May 2006.
17. T. Krishnamohan, D. Kim, C.D. Nguyen, C. Jungemann, Y. Nishi, and K. Saraswat, "High Mobility Low Band-to-Band Tunneling Strained Germanium Double gate Heterostructure FETs: SimulationsĦL, IEEE Trans. Electron Devices, 53, pp.1000-1009, May 2006
18. H. Jagannathan, H.-C.Kim, E.M. Freer, L. Sundstrom, T. Topuria, P. M. Rice, M. Deal, Y. Nishi, "Templated Germanium Nanowire Synthesis Using Oriented Mesoporous Organosilicate Thin Films," Journal of Vacuum Science and Technology B 24(5) pp 2220-2228,? May 2006.
19. H. Jagannathan, J. Woodruff, M. Deal, P. C. McIntyre, C. Chidsey, Y. Nishi, "Nature of Germanium Nanowire Heteroepitaxy on Silicon Substrates," Journal of Applied Physics Vol.100, pp. 024318, February 2006
20. G. Zhang, D. Mann, L. Zhang, A. Javey, Y. Li, E. Yenilmez, Q. Wang, J. McVittie, Y. Nishi, J. Gibbons, and H. Dai, Ultra-High-Yield Growth of Vertical Single-Walled Carbon Nanotubes: Hidden Roles of Hydrogen and Oxygen,!ĦL PNAS 102 pp.16141, August 2005
21. C-H .Lu, G. Wong, M. Deal, W. Tsai, P. Majhi, C. O. Chui, M.R. Visokay, J.J. Chambers, L. Colombo, B. M. Clemens and Y. Nishi !ĦħCharacteristics and Mechanism of Tunable Work Function Gate Electrodes Using a Bilayer Metal Structure on SiO2 and HfO2ĦL IEEE Electron Device Letters Vol.26, No.7 pp 445-448, July 2005.
22. J. Nasrullah, G.L. Tyler and Y. Nishi, !ĦħAn Atomic Force Microscope Study of Surface Roughness of Thin Silicon Films Deposited on SiO2ĦL IEEE Trans. Nanotechnology, Vol. 4 No. 3, pp303-311, May 2005.
23. Y. Li, D. Mann, M. Roland, W. Kim, A. Ural, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. Gibbons, Y. Nishi and H. DaiĦL Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD MethodĦL, Nano Lett., 4, pp.317, April, 2004.
24. R. R. Doering and? Y. Nishi, "Limits of Integrated-Circuit ManufacturingĦL Special Issue on Limits of Semiconductor Technology, Proc. of the IEEE, Vol. 89, pp. 375-393, March 2001.
25. Nishi, Surface States and Device Performance, (invited) Proc. 8th International Symposium on Silicon Materials Science and Technology, vol. 1, pp. 301-318, May 1998.
26. Y. Nishi, Research Collaboration in Semiconductor in the United States, (invited) Ohyo Buturi Japan Society of Applied Physics , vol. 66, pp. 827-829, August, 1997.
27. J. P. Snyder, Y. Nishi and C. R. Helms, Experimental Investigation of a PtSi Source and Drain Field Emission Transistor,ĦL Appl. Physics Letters, vol. 67, pp. 1420-1422, September 1995.
28. Y. Nishi, Challenges in CMOS Technology,ĦL Solid State Technology, vol. 31, pp. 115-119, November 1988.
29. Y. Nishi, Direction of VLSI CMOS Technology,ĦL Hewlett Packard Journal, vol. 38, pp. 24-25, June 1987.
30. H. Iwai, K. Taniguchi, M. Konaka and Y. Nishi, Two Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure,ĦL IEEE Trans. Electron Devices, ED29, pp. 625-630, April 1982.
31. Y. Nishi, Comparison of New Technologies for VLSI: ?Possibilities and Limitations, (invited), Microelectronics Journal, vol. 12, pp. 5-14, June 1981.
32. T. Mochizuki, T. Tsujimaru, M. Kashiwagi and Y. Nishi, Film Properties of MoSi2 and Their Application to Self-Aligned MoSi2 Gate MOSFET,ĦL IEEE Trans. Electron Devices, ED27, pp. 1431-1435, August 1980

 
   
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CENTER FOR INTEGRATED SYSTEMS, 420 VIA PALOU MALL, STANFORD UNIVERSITY, STANFORD, CA-94305