Year 2014-2015

Journal Publications

1. L. Zhao, H.-Y. Chen, S.-C. Wu, Z. Jiang, S. Yu, T.-H. Hou, H.-S. P. Wong and Y., Nishi, “Multi-Level Control of Conductive Nano-Filament Evolution in HfO2 ReRAM by Pulse-Train Operations”, Nanoscale 6, 5698 (2014).

2. B. Magyari-Kope, L. Zhao, K. Kamiya, M. Y. Yang, M. Niwa, K. Shiraishi and Y. Nishi, “The Interplay Between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices”, ECS Trans. 64, 153 (2014).

3. Z. Fang, X. Wang, J. Sohn, B. Weng, Z Zhang, Z Chen, Y. Tang, G. Lo, J. Provine, S. Wong, H-S. Wong and D. Kwong, "The Role of Ti Capping Layer in HfOX-Based RRAM Device, " IEEE Electron Device Letters, Vol. 35, pp.912-914, September 2014.

4. Ranida Wongpiya, Jiaomin Ouyang, Chia-Jung Chung, Duc T. Duong, Michael Deal, Yoshio Nishi, and Bruce Clemens, "Structural and Electrical Characterization of CoTiN Metal Gates", Journal of Applied Physics, 2015

5. S. Kumar, R. Esfandyarpour, R. Davis, Y. Nishi, “Surface Charge Sensing by Altering the Phase Transition in VO2”, Journal of Applied Physics, 116 (2014), 074511

6. S. Kumar, J-P. Strachan, M. D. Pickett, Y. Nishi, R. S. Williams, “Sequential Electronic and Structural Transitions in VO2 Observed Using x-ray Absorption Spectromicroscopy”, Advanced Materials, 26 (2014), 7505

7. B. Magyari-Köpe and Y. Nishi, “Resistive Memories”, Book chapter in Future Intelligent Integrated Systems of the Handbook of Intelligent Nanosystems Series, April 2014.

8. J.-Y. Kim, B. Magyari-Köpe, K.-J. Lee, H.-S. Kim, S.-H. Lee, and Y. Nishi, “Electronic structure and stability of low temperature and low symmetry Ta2O5 polymorphs”, Phys. Status Sol. RRL 8, 6, 560, 2014.

9. M.Y. Yang, K. Kamiya, H. Shirakawa, B. Magyari-Köpe, Y. Nishi, and K. Shiraishi, “Role of Nitrogen Incorporation into Al2O3-based Resistive Random-Access-Memory”, Applied Physics Express, Vol. 7, pp. 074202-074202-4, Jun. 2014.

10. K.-H. Xue, B. Traoré, P. Blaise, L.R.C. Fonseca, E. Vianello, G. Molas, B. De Salvo, G. Ghibaudo, B. Magyari-Köpe, and Y. Nishi, "A combined ab initio and experimental study on the nature of conductive filaments in Pt/HfO2/Pt resistive random access memory,” IEEE Transactions on Electron Devices, Vol. 61 (5), pp. 1394 - 1402, 2014.

11. H. Zheng, S. W. King, V. Ryan, Y. Nishi and J. L. Shohet, “Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation”, Appl. Phys. Lett. 104, 062904 (2014).

12. H. Zheng, E.T.Ryan, Y. Nishi and J.L. Shohet, “Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics,” Appl. Phys. Lett. 105, 202902 (2014)

13. H. Zheng, S. W. King, V. Ryan, Y. Nishi and J. L. Shohet, “Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation”, Appl. Phys. Lett. 104, 062904 (2014).

Conference Publications

1. L. Zhao, Z. Jiang, H.-Y. Chen, J. Sohn, K. Okabe, B. Magyari-Köpe, H.-S. P. Wong and Y. Nishi, “Ultrathin (~2nm) HfOx as the Fundamental Resistive Switching Element: Thickness Scaling Limit, Stack Engineering and 3D Integration”, IEEE Intl. Electron Device Meeting (IEDM), 2014.

2. B. Traoré1, P. Blaise1, E. Vianello1, H. Grampeix1,A. Bonnevialle2, E. Jalaguier1, G. Molas1, S. Jeannot2, L. Perniola1, B. DeSalvo1, Y. Nishi3, “Microscopic understanding of the low resistance state retention in HfO2 and HfAlO based RRAM”

3. M. Shulaker, T. Wu, A. Pal, L. Zhao, Y. Nishi, K. Saraswat, H.-S.P. Wong and S. Mitra, “Monolithic 3D Integration of Logic and Memory: Carbon Nanotube FETs, Resistive RAM, and Silicon FETs”, IEEE Intl. Electron Device Meeting (IEDM), 2014.

4. L. Zhao and Y. Nishi, “Pulse-Train Measurement Techniques: An RRAM Test Vehicle for In-Depth Physical Understanding”, IEEE Intl. Conf. on Solid-State and Integrated Circuit Tech. (ICSICT), 2014, invited.

5. O. Pirrotta, L. Zhao, A. Padovani, L. Larcher, B. Magyari-Köpe and Y. Nishi, “Multi-Scale Modeling of Oxygen Vacancies Assisted Charge Transport in Sub-Stoichiometric TiOx For RRAM Applications”, Intl. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 2014. (O. Pirrotta and L. Zhao contributed equally.)

6. H.-Y. Chen, B. Gao, H. Li, R. Liu, P. Huang, Z. Chen, B. Chen, F. Zhang, L. Zhao, Z. Jiang, L. Liu, X. Liu, J. Kang, S. Yu, Y. Nishi and H.-S. Philip Wong, “Towards High-Speed, Write-Disturb Tolerant 3D Vertical RRAM Arrays”, IEEE Symposium on VLSI Technology (VLSIT), 2014.

7. Yoshio Nishi, Challenges and Opportunities of Nanoelectronic Devices, Resistance Switching Memory, MINATEC seminar series, 2014, Grenoble, France

8. L. Zhao, H.-Y. Chen, S.-C. Wu, Z. Jiang, S. Yu, T.-H. Hou, H.-S. P. Wong and Y., Nishi, “Improved Multi-level Control of RRAM Using Pulse-train Programming”, Intl. Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2014. (Best Student Paper)

9. R. Liu, H.-Y. Chen, H. Li, P. Huang, L. Zhao, Z. Chen, F. Zhang, B. Chen, L. Liu, X. Liu, B. Gao, S. Yu, Y. Nishi, H.-S. P. Wong and J. Kang, “Impact of Pulse Rise Time on Programming of Cross-Point RRAM Arrays”, Intl. Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2014.

10. B. Magyari-Kope, L. Zhao, Y. Nishi, K. Kamiya, M. Y. Yang and K. Shiraishi “Ab initio Modeling of Resistive Switching Mechanism in Binary Metal Oxides,” IEEE Intl. Symposium on Circuits and Systems (ISCAS), 2014, invited.

11. M. Aslani, C. M. Garner, R. James, U. Chiluwal, J. Kelber and Y. Nishi, “Photoemission and NEXAFS Studies of Strained Graphene,” presented at 2014 MRS Spring Meeting & Exhibit, San Francisco, California, April 21-25, 2014.

12. M. Aslani, C. M. Garner and Y. Nishi, " Electronic and Electrical Studies of Strained Graphene" presented at 16th annual TECHCON 2014, Austin, TX September 7-9, 2014

13. J. Provine, Z. Zhang, Z. Fang, S. Yeh, Y. Wu, J. Sohn, H. Yi, T.F. Wu, B.B. Weng, X. Wang, G.-Q. Lo, S. Mitra, H.-S. P. Wong, and S. Wong, "Advances in RRAM Through Split Manufacturing and Aggressive Scaling," Government Microcircuit Applications and Critical Technology Conference, paper 7.1, Charleston, SC, March 2014.

14. Mike Garner, Liang Zhao and Yoshio Nishi, “Multi-level Control of RRAM and Implications to Neuromorphic Synapses” 2nd IEEE Rebooting Computing Summit on April 15, 2014 in Santa Cruz, CA.

15. K. Kamiya, M.Y. Yang, B. Magyari-Köpe, Y. Nishi, and K. Shiraishi, “Study of the operation mechanism on resistive random-access-memory by first-principles calculations”, The Japan Society of Applied Physics, Mar. 17-20, Aoyama Gakuin University, Sagamihara, Japan, 2014.

16. D. Duncan, B. Magyari-Köpe, and Y. Nishi, “Ab initio Calculations for Hydrogen-Doped HfOx RRAM,” American Physical Society March Meeting, W53.005, March, 2014.

17. (Invited) B. Magyari-Köpe and Y. Nishi, “Quantum Mechanical Insight into the Resistance Switching Properties of Binary Transition Metal Oxides”, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy, Phoenix, Arizona, March 2014.

18. (Invited) B. Magyari-Köpe and Y. Nishi, “Modeling the Operation of Resistive Switching Memory Devices”, American Physical Society March Meeting, Denver, Colorado, March 2014.

19. (Invited) B. Magyari-Köpe, L. Zhao, Y. Nishi, K. Kamiya, M. Y. Yang and K. Shiraishi “Ab initio Modeling of Resistive Switching Mechanism in Binary Metal Oxides,” IEEE Intl. Symposium on Circuits and Systems (ISCAS), Melbourne, Australia, Jun 1-5, 2014.

20. Antony Jan, Yesheng Yee, Takashi Tachikawa, Blanka Magyari-Köpe, Yoshio Nishi, Harold Y. Hwang, Stacey F. Bent, Bruce M. Clemens, "Bandgap Grading and Point Defects in Cu2Zn(Ge,Sn)(S,Se)4 Solar Cells,” Bay Area Photovoltaic Consortium (BAPVC) Bi-Annual Meeting, Stanford, CA, May 2014.

21. (Invited) B. Magyari-Köpe, L. Zhao, Y. Nishi, K. Kamiya, M. Y. Yang and K. Shiraishi, “Simulation of filamentary switching in binary metal oxide based RRAM devices”, IEEE International Nanoelectronics Conference (INEC), Sapporo, Japan, 2014.

22. (Invited) B. Magyari-Köpe, L. Zhao, Y. Nishi, K. Kamiya, M. Y. Yang and K. Shiraishi, “The interplay between electronic and ionic transport in the resistive switching process of random access memory devices”, Electrochemical Society Fall Meeting, Semiconductors, Dielectrics, and Metals for Nanoelectronics Symposium, Cancun, Mexico, October 2014.

23. Pirrotta, A Padovani, L Larcher, L Zhao, B Magyari-Kope, Y Nishi, "Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiO x for RRAM application", Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, September 2014.

24. (Invited) Kenji Shiraishi, Moon-Young Yang, Katsumasa Kamiya, Blanka Magyari-Kope, Yoshio Nishi, “First Principles Design of Future Resistive Random-Access-Memories”, Materials Research Society Fall Meeting, Boston, 2014.

25. Yesheng Yee, Blanka Magyari-Kope, Yoshio Nishi, Stacey Bent, Bruce Clemens. “Deep Recombination Centers in Cu2ZnSnSe4 Solar Cells”, Materials Research Society Fall Meeting, Boston, 2014.

26. Liang Zhao, Zizhen Jiang, Hong-Yu Chen, Joon Sohn, Kye Okabe, Blanka Magyari-Köpe, H.-S. Philip Wong, Yoshio Nishi, “Ultrathin (~2nm) HfOx as the Fundamental Resistive Switching Element: Thickness Scaling Limit, Stack Engineering and 3D Integration”, Tech. Digest IEDM, 2014

 

 

Year 2013-2014

Journal Papers

Conference Presentations

Invited Papers and Presentations

Year 2012-2013

Year 2011-2012

Invited Conference Presentations

Year 2011

PUBLICATIONS:

PUBLICATIONS: 

 

A.            Refereed Journal Articles:

1.            S. Gupta, R. Chen, B. Magyari-Kope, H. Lin, B. Yang, A. Nainani, Y. Nishi, J. S. Harris and K. C. Saraswat, “GeSn technology: extending the Ge electronics roadmap”, IEDM Tech. Digest, 398, 2011.

2.            B. Magyari-Kope, S. Park, H. Lee, and Y. Nishi, “Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations”, ECS Transactions - ULSI vs. TFT”, 37, 2011.

3.            S. Park, B. Magyari-Kope, and Y. Nishi, “Theoretical study of the resistance switching mechanism in rutile TiO2-x for ReRAM: the role of oxygen vacancies and hydrogen impurities”, Tech. Digest of VLSI Tech. Symp., 2011.

4.            B. Magyari-Kope, M. Tendulkar, S. Park, H. Lee, and Y. Nishi, “Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0:7Ca0:3MnO3”, Nanotechnology 22, 254029, 2011.

5.            S. Park, B. Magyari-Kope, and Y. Nishi, “The impact of oxygen vacancies on the formation of a conductive channel in rutile TiO2”, IEEE Electron Device Letters, 32, 197, 2011.

6.            S. Park, B. Magyari-Kope, and Y. Nishi, “Electronic correlation effects in reduced rutile TiO2-x within the LDA+U method”, Phys. Rev. B, 82, 115109, 2010.

7.            G. Thareja, S. Chopra, B. Adams, Y. Kim, S. Moffatt, K. Saraswat and Y. Nishi, “High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for n+/p Junction Diode”, IEEE Electron Device Letters, 32, 838, July, 2011

8.            G. Thareja, S-L.Cheng, T. Kamins, K. Saraswat and Y. Nishi, “Electrical Characteristics of Germanium n+/p Junction Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb”, IEEE Electron Device Letters, 32, 608, May, 2011

9.            H-Y. Yu, M. Kobayashi, J.-H. Park, Y. Nishi and K. Saraswat, “Novel Germanium n-MOSFETs with Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration”, IEEE Electron Device Letters, 32, 446, April, 2011

10.          M. Kobayashi, J. Mitard, T. Irisawa, T-Y. Hoffmann, M. Meuris, K. Saraswat, Y. Nishi and M. Heyns, “On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs, IEEE Trans. Electron Devices, 58, 376, Feb. 2011

11.          S-G Park, B. Magyari-Kope and Y. Nishi, “Impact of oxygen vacancy ordering on the formation of a conductive filament in TiO2 for resistive switching memory,” IEEE Electron Device Letters, 32, 197, Feb. 2011

12.          B. Magyari-Köpe, S. Park, H. Lee, and Y. Nishi,” Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations”, ECS Transactions - ULSI vs. TFT", 37, 2011.

13.          B. Magyari-Köpe, M. Tendulkar, S. Park, H. Lee, and Y. Nishi, “Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3”, Nanotechnology 22, 254029, 2011

14.          J. J. Jameson, D. Nigo, C. Benka, J. P. McVittie, Y. Nishi and B.A.Young, “ Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3”, J. Non-Crystalline Solids, 357 (2011) 2148-2151

15.          G. Shanbot, S-L Chen, J. Lu, Y. Nishi and J. Vuckovic, “Direct band Ge photoluminescence near 1.6um coupled to Ge-on Si microdisk resonators”, Appl. Phys. Letters 97 (2010) 241102

16.          M. E. Grubbs, X. Zhang, M. Deal, Y. Nishi, and B. M. Clemens, “Development and Characterization of High Temperature Stable Ta-W-Si-C Amorphous Metal Gates,” Applied Physics Letters, vol. 97, 223505, 2010

17.          R. Berringer, C-H. Lu, M. Deal, Y. Nishi, and R. Dauskardt, “Bilayer metal gate electrodes with tunable work function - adhesion and interface characterization,” J. Appl. Physics, vol. 108, p. 53704, 2010.

 

 

B.            Refereed Symposia/Conference Publications and/or Proceedings:

1.            S-G Park, B. Magyari-Kope and Y. Nishi, “Theoretical Study of the Resistance Switching Mechanism in Rutile TiO2-x for ReRAM,” 2011 Symposium VLSI Technology, Kyoto, Japan.

2.            B. Magyari-Köpe and Y. Nishi,  “Modeling oxygen vacancies in redox devices” 2010 ITRS Memory Materials Workshop, Emerging Memory Research Materials and Devices, Tsukuba, Japan.

3.            Magyari-Köpe, S. Park, H. Lee, and Y. Nishi,  Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations” ECS Transactions - ULSI vs. TFT", 37, 2011

4.            Asad Kalantarian, Gennadi Bersuker, D.C. Gilmer, D. Veksler, B. Butcher, A. Padovani, O. Pirrotta, L. Larcher, P. Kirsch, Y. Nishi, “Controlling Uniformity of RRAM Characteristics via the Forming Process”, IEEE International Reliability Physics Symposium, Accepted Dec. 2011

5.            B. Butcher, S. Koveshnikov, D.C. Gilmer, G. Bersuker, M.G. Sung, A. Kalantarian, C. Park, R. Geer, Y. Nishi, P.D. Kirsch, R. Jammy, “High Endurance Performance of 1T1R HfOx based RRAM at Low (<20uA) Operative Current and Elevated (150C) Temperature”, IEEE International Integrated Reliability Workshop, October 2011

6.            D.C. Gilmer, S. Koveshnikov, B. Butcher, G. Bersuker, A. Kalantarian, M.Sung, R. Geer, Y. Nishi, P. Kirsch, R. Jammy, “Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 μA to 20 μA at +/- 1V”, VLSI-TSA, Dec. 2011

7.            Asad Kalantarian; G. Bersuker, D.C. Gilmer, D. Veksler, B. Butcher, A. Padovani, L. Vandelli, L. Larcher, R. Greer, Y. Nishi, P.D. Kirsch, “Low Power RRAM with Improved Uniformity through Efficient Filament Control Using CVS Forming”, 42nd IEEE Semiconductor Interface Specialists Conference, December 1-3 2011, Arlington VA

8.            S. Gupta, R. Chen, B. Magyari-Kope, H. Lin, B. Yang, A. Nainani, Y. Nishi, J. S. Harris and K. C. Saraswat, “GeSn technology: extending the Ge electronics roadmap”, IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 2011.

9.            S. Park, B. Magyari-Kope, and Y. Nishi, “Theoretical study of the resistance switching mechanism in rutile TiO2-x for ReRAM: the role of oxygen vacancies and hydrogen impurities”, VLSI Symposium, Kyoto, Japan, June 2011.

10.          H. Lee, B. Magyari-Kope, K. Cho and Y. Nishi, “Understanding of the resistive switching of unipolar NiO-based RRAM”, April 2011.Materials Research Society (MRS) Spring Meeting, San Francisco, USA.

11.          H. Lee, S. Ryu, B. Magyari-Kope, K. Cho and Y. Nishi, “Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer”,Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011.

12.          K. Cho, H. Lee, S. Park, B. Magyari-Kope, Y. Nishi, S. Hong, S. Chung, J. Park and J. Yi, “Electronic structure study of the reduced anatase TiO2-x using the GGA+Ud+Up method”,Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011.

13.          K. Cho, H. Lee, S. Park, B. Magyari-Kope, Y. Nishi, S. Hong, S. Chung, J. Park and J. Yi, “First principles study of the metal-oxide interfaces in Pt/TiO2/Pt for resistive change memory”,Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011.

 

 

PRESENTATIONS

A.            Plenary/Invited Presentations:

1.            Y. Nishi, “Today and Future of 3D Devices and Integration”, Joint Open Workshop on 3D Transistor and its Applications, Nov. 10th, 2011, Tokyo, Japan

2.            Y. Nishi, “Nanoelectronic Devices and Integrations on Silicon Platform

      Today and Tomorrow”,MINATEC Seminar, September, 2011, Grenoble, France

3.            Y. Nishi, “Recent progress in Nanoelectronics Research and Applications” GCOE Symposium, July 1, 2011, Waseda University, Tokyo, Japan

4.            Y. Nishi, « Issues and Challenges of Graduate Education in US and Japan” GCOE Symposium, June 30, Waseda University, Tokyo, Japan

5.            Y. Nishi, “Recent Progress in Resistive Switching Memories’, Workshop on Innovative Memory Technologies, June 29, 2011, Grenoble, France

6.            Y. Nishi, “Future of Nanoelectronic Device Research Challenges and Opportunities’ LETI Review, June 26-27, 2011, Grenoble,France

7.            Y. Nishi, “RRAM, Challenges and Opportunities” Short Course at International Memory Workshop, May 22, 2011, Monterey, California

8.            B. Magyari-Köpe and Y. Nishi, “Oxygen vacancy mediated dielectric breakdown in ultrathin high-k gate dielectric stacks”, March 2011.American Physical Society (APS) March Meeting, Dallas, USA

9.            Y. Nishi, “VLSI Technologies, Past, Present and Future, challenges and opportunities” Semicon Korea, Keynote address, January 26, 2011, Seoul Korea

10.          Y. Nishi, “Recent progress in non-charge based non-volatile memory and high performance transistor research at Stanford”, Samsung Seminar Series, Jan. 25, 2011, Gihung, Korea

11.          B. Magyari-Köpe and Y. Nishi (invited), “Ab initio modeling of oxygen vacancies: understanding the switching mechanism in RRAM devices and the dielectric breakdown mechanism of ultrathin high-k based CMOS gate stacks”, SEMATECH, Austin, TX, USA, March 2011

12.          Y. Nishi, “Differences between US and Japan in Academia”, Kagoshima University lecture, January 28, Kagoshima, Japan

13.          Y. Nishi, “Graduate education and traning”, Waseda University lecture, March 14, 2011, Waseda University, Japan

14.          Y. Nishi, “Materials Challenge of Integration of Nanoelectronic Devices and Circuits”, 2010 Fall MRS Meeting, Nanomaterials Integration for Electronics, Energy, and Sensing, Dec. 1-3, 2010 Boston, MA.

15.          B. Magyari-Köpe and Y. Nishi, “Modeling oxygen vacancies in redox devices”, 2010 ITRS Memory Materials Workshop, Emerging Memory Research Materials and Devices, Tsukuba, Japan, 2010 November

16.          Blanka Magyari-Kope and Yoshio Nishi, “Ab initio simulations of the resistance switching in RRAM devices: the role of oxygen vacancies”, 8th International Symposium on Advanced Gate Stack Technology, Bolton Landing, NY, USA, October 2011.

17.          Blanka Magyari-Kope and Yoshio Nishi, “Modeling the resistance switching mechanism in RRAM devices: the role of oxygen vacancies and hydrogen impurities”,  Micron Technology, Boise, ID, USA, September 2011.

18.          Blanka Magyari-Kope and Yoshio Nishi, “Ab initio modeling of oxygen vacancies: understanding the switching mechanism in RRAM devices and the dielectric breakdown mechanism of ultrathin high-k based CMOS gate stacks”, Intermolecular, San Jose, CA, USA, August 2011.

19.          Blanka Magyari-Kope and Yoshio Nishi, “Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations”, Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors III, Hong-Kong, China, June 2011.

20.          Blanka Magyari-Kope and Yoshio Nishi, “Ab initio modeling of oxygen vacancies: understanding the switching mechanism in RRAM devices and the dielectric breakdown mechanism of ultrathin high-k based CMOS gate stacks”, SEMATECH, Austin, TX, USA, March 2011.

21.          Blanka Magyari-Kope and Yoshio Nishi, “Dielectric breakdown mechanism in CMOS devices and the switching mechanism in RRAM devices: the role of oxygen vacancies”, Corporate Research & Development Center Toshiba, Kawasaki, Tokyo, Japan, December 2010.

22.          Blanka Magyari-Kope and Yoshio Nishi, “Dielectric breakdown mechanism in CMOS devices and the switching mechanism in RRAM devices: the role of oxygen vacancies”,

23.          RIKEN, Cross-correlated Materials Research Group, Wako, Tokyo, Japan, December 2010.

24.          Blanka Magyari-Kope and Yoshio Nishi, “Dielectric breakdown mechanism in CMOS devices and the switching mechanism in RRAM devices: the role of oxygen vacancies”,

25.          University of Tsukuba, Deparment of Physics, Tsukuba, Japan, November 2010.

26.          Blanka Magyari-Kope and Yoshio Nishi, “Modeling oxygen vacancies in redox devices”, 2010 ITRS Memory Materials Workshop, Emerging Memory Research Materials and Devices,Tsukuba, Japan, November 2010.

 

 

 

B.            Presentations at Meetings and Symposia:

1.            B. Magyari-Köpe, and Y. Nishi, “Interface structures and band offsets in a model Ge-GeO2-x-HfO2-TiN metal gate stack: localization of oxygen vacancies near interfaces?”, April 2011.Materials Research Society (MRS) Spring Meeting, San Francisco, USA.

2.            M. Grubbs, X. Zhang, M. Deal, Y. Nishi, B. Clemens, “Compositional and thermal characterization of amorphous Ta-W-Si-B gates. MRS spring Meeting,” Oral Presentation, April 14, 2010, San Fransisco

3.            B. Magyari-Köpe and Y. Nishi, “Oxygen vacancy mediated dielectric breakdown in ultrathin high-k gate dielectric stacks”, American Physical Society (APS) March Meeting, Dallas, USA, March 2011.

4.            B. Magyari-Köpe, and Y. Nishi, “Interface structures and band offsets in a model Ge-GeO2-x-HfO2-TiN metal gate stack: localization of oxygen vacancies near interfaces”, Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

5.            Hyung Dong Lee, Blanka Magyari-Köpe, Kwanghee Cho and Yoshio Nishi, “Understanding of the resistive switching of unipolar NiO-based RRAM, “ Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

6.            Hyung Dong Lee, Seung Wook Ryu, Blanka Magyari-Köpe, Kwanghee Cho and Yoshio Nishi, “Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer”, Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011.

7.            Kwanghee Cho, Hyung Dong Lee, Seonggeon Park, Blanka Magyari-Köpe, Yoshio Nishi, Sungjoo Hong, Sungwoong Chung, Jinwon Park and Jaeyun Yi, “First principles study of the metal-oxide interfaces in Pt/TiO2/Pt for resistive change memor” Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

8.            Kwanghee Cho, Hyung Dong Lee, Seonggeon Park, Blanka Magyari-Köpe, Yoshio Nishi, Sungjoo Hong, Sungwoong Chung, Jinwon Park and Jaeyun Yi, “Electronic structure study of the reduced anatase TiO2-x using the GGA+Ud+Up method”, Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

 

 

 

Year 2009-2010

Invited Talks

  1. Y. Nishi, "Past, Present and Future of silicon Technology", 2010 Symposium on Materials for Enabling Nanodevices, September 8-10, 2010, UCLA,
  2. Y. Nishi, "Challenges and Opportunities for Future Nonvolatile Memory Technology",2010 International Symposium on Next Generation Tera-bit- Memory Technology, August 26, 2010 Hanynag University, Seoul , Korea
  3. Y. Nishi, "Nonvolatile Memory Trend", 3rd Annual Meeting of International Collaborative R&D Project for Semiconductors,Renaissance Hotel, Seoul, Korea, August 25, 2010
  4. Y. Nishi, "Perspective of silicon based devices and integrations, today and tomorrow" ISTESNE (keynote) June, 2010, Tokyo, Japan
  5. Y. Nishi, "Resistive Switching Mechanism and On-state Conduction ", Resistive Switch Memory Workshop, April 4, 2010, Santa Clara Intel
  6. J.R. Jameson and Yoshio Nishi, "The Roles of Oxygen Vacancies and Hydrogen Ions in TiO2 Based Memory Devices:, June, 2010 ISIF, Puerto Rico
  7. Y. Nishi, H-S P. Wong and S. Wong, , "Resistance Change Memory Materials and Devices, Mechanism and Scalability",Nonvolatile Memory Technology Symposium, October 26, 2009, Portland, OR
  8. Y. Nishi, "Integration Challenges and Opportunities of Nanoelectronic Devices", Electrochemical Society meeting, October, 2009, Vienna Autria,
  9. Y. Nishi, " Nanoscience and Interface Physics and Control",( keynote) 2009 Promotion of Science Agency of Japan Symposium, November, 2009, Tokyo

Refereed Publications

  1. H. Sinha, D.B. Straight, J.L. Lauer, N.C. Fuller, S.U. Engelmann, Y. Zhang, G.A. Antonelli, M. Severson, Y. Nishi and J. L. Shohet, "Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation" J. Vac. Sci. Technology, A26(6) (2010) 1316-8.
  2. Hyung Dong Lee, Blanka Magyari-Kope, and Yoshio Nishi, "Model of Metallic Filament Formation and Rupture in NiO for Unipolar Switching", Phys. Rev. B, vol 81, 193202 (2010),
  3. Yiyang GongSatoshi Ishikawa, Szu-Lin Cheng, Marika Gunji, Yoshio Nishi, and Jelena Vučković, "Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals", Phys Rev. B 81, 235317 (2010)
  4. N. Tayebi, Y. Narui, N. Franklin, C. P. Collier, K. Giapis, Y. Nishi, Y. Zhang, "Fully Inverted Single-Digit Nanometer Domains in Ferroelectric Films," Applied Physics Letters, 96(2), , 023103 (2010).
  5. N. Tayebi, Y. Zhang, Y., R. J. Chen, Q. Tran, R. Chen, Q. Ma, Y. Nishi, and V. Rao, "A 5 Kilometer Wear-Endurance Mechanism for Ultrahigh Density Probe-Based Nonvolatile Memory Devices," In review to ACS NANO.
  6. Ying Chen, Ho-Ceol Kim, Park SangMin, Yoshio Nishi, "Templated Electrochemical Synthesis of Titania Nanopillars on Conductive Substrates", J. Electrochem Soc. Vol 157, E155-161 (2010)
  7. Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi, "Electronic correlation effects in reduced rutile TiO2 within the LDA+U method," Phys Rev B vol 81 (2010)
  8. Ying Chen, Ho-Ceol Kim, Jim McVittie, Chiu-Ting and Yoshio Nishi, "Synthesis of TiO2 Nanoframe and the Prototype of Nanoframe Solar Cell", Nanotechnology 21, 185303 (2010)
  9. Zihong Liu, Masaharu Kobayashi, Bipul C. Paul, Zhenan Bao and Yoshio Nishi, "Contact Engineering for Organic Semiconductor Devices via Fermi Level Depinning at the Metal-Organic Interface", Phys Rev. B 81, 035311 (2010)
  10. Yiyang Gong,Satoshi Ishikawa, Szu-Lin Cheng, Marika Gunji, Yoshio Nishi, Jelena Vučković, "Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals", Phys. Rev. B 81, 235317 (2010)
  11. Melody E. Grubbs, Xiao Zhang, Michael Deal, Yoshio Nishi, and Bruce M. Clemens, "Development and Characterization of High Temperature Stable Ta-W-Si-C Amorphous Metal Gates", Electron Device Letters, to be published
  12. Masaharu Kobayashi, Toshifumi Irisawa, Blanka Magyari-Kope, Krishna Saraswat, H. -S. Philip Wong and Yoshio Nishi, "Uniaxial Stress Engineeing for High-Performance Ge NMOSFETs", IEEE Transactions on Electron Devices, 57 1037 (2010)
  13. M. Kobayashi, G. Thareja, Y. Sun, N. Goel, M. Garner, W. Tsai, P. Pianetta and Y. Nishi, "The Effect of Wet Surface Clean and In-situ Interlayer on InAlAs Metal-Oxide-Semiconductor Characteristics" Appl. Phys. Letters, vol. 96, 142906, 2010.
  14. J.L. Lauer, H. Sinha, M.T. Nichols, G.A.Antonelli, Y. Nishi and J.L. Shohet, "Charge Trapping with in UV and vacuum UV Irradiated Low-k Porous Organiosilicate Dielectrics", J. Electrochem. Soc. Vol 157, G177-G182, 2010
  15. H.Ren, S.L. cheng, Y. Nishi and J.L. Shohet, "Effects of vacuum Ultraviolet and Ultraviolet Irradiation on Ultrathin Hafnium-Oxide Dielectric Layers on (100)Si as Measured with Electron Spin Resonance", Appl. Phys. Letters vol.96 192904, 2010
  16. H. Sinha, H.Ren, A, Sehgal, G.A. Antonelli, Y. Nishi and J.L. Shohet,"Numerical Simulation of Vacuum-Ultraviolet Irradiation of Dielectric Layers", Appl. Phys. Letters, vol 96, 142903 , 2010
  17. H. Sinha, J.L.Lauer, M.T. Nicholas, G.A. Antonelli, Y, Nishi and J. L.Shohet, "Effect of Vacuum Ultraviolet and Ultraviolet Irradiation on Capacitance-Voltage Characteristics of Low-k-Porous Organosilicate Dielectrics", Appl. Phys. Letters vol.96, 052901, 2010.
  18. C-H. Lu, G.M.T. wong, R. Berringer, R. Dauskardt, M. D. Deal, B. M. Clemens and Y. Nishi, "Bilayer Metal Gate Electrodes with Tunable Work Function: Mechanism and Proposed Model", J. Appl. Phys, vol. 107, 063710, 2010
  19. L. Geng, B. Magyari-Kope and Y. Nishi, "Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface", IEEE Electron Device Letters, Vol. 30, pp. 963-965, 2010
  20. M. E. Grubbs, M. Deal, Y. Nishi and B. Clemens, "The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices" IEEE Electron Devices Letters, Vol. 30, pp. 925-927, 2010
  21. H. Y. Yu, S.-L. Cheng, P. B. Griffin, Y. Nishi and K. C. Saraswat, "Germanium In SituDoped Epitaxial growth on Si for High Performance n+/p-Junction Diode" IEEE Electron Devices Letters, Vol. 30, pp. 1002-1004, 2010
  22. S. Kobayashi ,Y. Nishi, and K.C. Saraswat," Effect of Isochronal Hydrogen Annealing on Surface Roughness and Threading Dislocation Density of Epitaxial Ge films Grown on Si" Thin Solid Films 518 (2010) S136-S139.
  23. Masaharu Kobayashi, Gaurav Thareja, Masato Ishibashi, Yun Sun, Peter Griffin, Jim McVitee, Piero Pianetta, Krishna Saraswat and Yoshio Nishi, "Radical Oxidation of Germanium for Interface Gate Dielectric GeO2 Formation in Metal-Insulator-Semiconductor Gate Stack", J. Appl. Phys. Vol. 106, 104117 (2009)
  24. H. Sinha,1 J. L. Lauer,1 M. T. Nichols,1 G. A. Antonelli,2 Y. Nishi,3 and J. L. Shohet1,"Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics" Applied Physics Letters vol. 96, 052901 (2010).

Refereed Conference Presentations

  1. A. Nainani, T. Irisawa, Z. Yuan, Y.Sun1, T. Krishnamohan, M. Reason2, B.R. Bennett2, J.B. Boos2, M. Ancona2, Y. Nishi, K.C. Saraswat, "Development of High-k Dielectric for Antimonides & a Sub 350ºC III-V pMOSFET Outperforming Ge" International Electron Devices Meeting, (IEDM) December 2010 San Francisco, accepted
  2. G. Thareja1, J. Liang1, S. Chopra2, B. Adams2, N. Patil1, A.Nainani1, E. Tasyurek1, Y.Kim2, S. Moffatt2, D. Loftis3, R. Brennan3,J. McVittie1, K. Saraswat1 and Y. Nishi1, " High Performance Germanium NMOSFET with Antimony Dopant Activation Beyond 1020cm3", International Electron Devices Meeting, (IEDM) December 2010, San Francisco, accepted
  3. Xiao Zhang, Jing Li, Melody Grubbs, Mike Deal, Blanka Magyari-Kope, Bruce Clemens, Yoshio Nishi, Physical Model of the Impact of Metal Grain Work Function Variability on Emerging Dual Metal Gate MOSFETs and its implication for SRAM Reliability, IEDM 2009, December, Baltimore,
  4. Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi, "The impact of oxygen vacancy configurations on the conductance channel in rutile TiO2 for resistance switching memory, " MRS Spring meeting, San Francisco, USA, April, 2010.
  5. Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi, "The impact of oxygen vacancies on conductance channel in rutile TiO2," 1st International Workshop on Conductive Bridge Memory (CBRAM), Stanford University, Stanford, USA, April, 2010
  6. Gaurav Thareja, Saurabh Chopra, Bruce Adams, Nishant Patil, Yen Ta, Peter Porshnev, Yihwan Kim, Steve Moffatt, Danny Loftis, Roger Brennan,Gary Goodman, Ihab Abdelrehim, Krishna Saraswat and Yoshio Nishi, "Ultra Shallow Junctions with High Dopant Activation and GeO2 Interfacial Layer for Gate Dielectric in Germanium MOSFETs", 68th Device Research Conference (DRC), June 21-23, 2010, South Bend, Indiana.
  7. E. Cockayne, B. Magyari Kope and Y. Nishi, "Effect of Oxygen Vacancies and Interfacial Oxygen Concentration on Local Structure and Band Offsets in a Model Metal-HfO2-SiO2-Si Stack", IEEE SISC December ,2009, Arlingtonb
  8. Blanka Magyari Kope and Yoshio Nishi, "Oxygen Vacancy Mediated Dielectric Breakdown in High-k Gate Stacks", MRS Spring Meeting, April 2010, San Francisco
  9. Blanka Magyari Kope and Yoshio Nishi, "The Electronic Structure of conductive Channels Mediated by Oxygen vacancies in Transition Metal Oxides", Resistive Switching and Memristors Workshop, UC Davis, Davis, CA, March, 2010
  10. Blanka Magyari Kope, and Yoshio Nishi, "Ab-Initio Modeling of High k gate Dielectric Stacks" Oxygen vacancy Assisted Electron Tunneling," 6th International Symposium on Advanced Gate Stack Technology, San Francisco, August, 2009
  11. Hyung Dong Lee, Blanka Magyari-Kope, and Yoshio Nishi,"The Impact of Oxygen Vacancies on the Formation of Metallic Filament in NiO", Resistive Switching and Memristors Workshop, 2010, University of California, Davis
  12. Hyung Dong Lee, Blanka Magyari-Kope, and Yoshio Nishi,"Metallic Filament Formation and Oxygen Vacancy Migration Barrier in NiO for Unipolar Resistive Switching", MRS-Sprint, 2010, San Francisco
  13. M. Kobayashi, J. Mitrard, T. Irisawa, T-Y. Hoffmann, M. Meuris, K. Saraswat, Y. Nishi and M. Heyns," Experimental Demonstration of High Source Velocity and its enhancement by Uniaxial Strained in Ge PFETs, Symposium of VLSI Technology, Hawaii, June, 2010
  14. Yoonyoung Chung, Joon Hak Oh, Sabin–Lucian Suraru, Frank Würthner, Yoshio Nishi, Boris Murmann, Zhenan Bao, "Low-voltage Operating Organic Field-Effect Transistors and Circuits on Flexible Substrates," Materials Research Society Spring Meeting, 2010, San Francisco, CA.
  15. J.R. Jameson and Y. Nishi, "The Roles of Oxygen Vacancies and Hydrogen Ions in TiO2 Based Memory Devices", ISIF, Puerto Rico, June 2010
  16. K. Hosotani, S.-G. Park, Y. Nishi, "Electric Field Dependent Switching and Degradation of Resistance Random Access Memory," 2009 International Integrated Reliability Workshop Final Report, p11-14 (2009)
  17. Z. Liu, M. Kobayashi, B. C. Paul, Z. Bao, and Y. Nishi, "Fermi-Level Depinning at Metal-Organic Semiconductor Interface for Low-Resistance Ohmic Contacts", IEEE International Electron Devices Meeting (IEDM 2009)

Year 2008

Planetary/Invited Presentations

  1. Y. Nishi, "Progress in Evolutionary and Revolutionary Nanoelectronics from Device and Process Point of View" CNST Nanotechnology Workshop, September 2008, UIUC, IL.
  2. Y. Nishi, "Recent Progress in High Mobility Channel Materials and Devices" IEEE NMDC, October 2009, Kyoto, Japan.
  3. Y. Nishi, "Challenge of Nanoelectronic Materials and Devices toward New Nonvolatile Memories" 9th International Conference on Solid-State and Integrated-Circuit Technology, October, 2008, Beijing, China.
  4. Y. Nishi, "Recent Progress in Resistance Change Memory" American Vacuum Society Thin-films User Group meeting, October 15, 2008, Santa Clara, CA.
  5. Y. Nishi, "Current Status of Nanotechnology Research" Sixth U.S.-Korea Forum on nanotechnology,May, 2009 Las Vegas, Nevada.
  6. Y. Nishi, "Revolutionary Nanoelectronic Devices and Processes for Post 32nm CMOS" 2009 Electrochemical Society Meeting, May, San Francisco.
  7. Y. Nishi, "Opportunities and Challenges of Nanoelectronic Materials and Devices for Future Applications" (keynote) International Symposium for Nanotechnology and Applications, Waseda University, May, 2009, Tokyo.
  8. Y.Nishi, "Integration Challenges and Opportunities of Nanoelectronic Devices", Electrochemical Society meeting, October, 2009, Vienna Autria,
  9. Y. Nishi, " Nanoscience and Interface Physics and Control",( keynote) 2009 Promotion of Science Agency of Japan Symposium, November, 2009, Tokyo.

Refereed Journal Publications

  1. M. Kobayashi, P.T. Chen, Y.Sun, N. Goel, P. Majhi, M. Garner, W.Tsai, P. Pianetta, Y. Nishi, "Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interface Self-Cleaned by Atomic Layer Deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As" Appl. Phys. Letters vol 93, 182103, 2008.
  2. B. Magyari-Kope, S. Park, L. Colombo, Y. Nishi and K.Cho, "First Principles Study of Al-Ni Bilayers on SiO2: Implications to Effective Work Function Modulation in Gate Stacks", J. Appl. Phys. 247333-0, November, 2008.
  3. B. Magyari-Kope, S. Park, L. Colombo, Y. Nishi and K. Cho, "Ab-Initio Study of Al-Ni Bilayers on SiO2: Implications to Effective Work Function Modulation Gate Stacks" J. Appl. Phys. 105, 013711, January, 2009.
  4. M. Kobayashi, A. Kinoshita, K. Saraswat, H-S P Wong and Y. Nishi, "Fermi Level Depinning in Metal/Ge Schottky Junction for Metal Source/Drain Ge Metal-Oxide-Semiconductor Field Effect Transistor Applications", J. Appl. Phys. 105, 023702, January, 2009.
  5. Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi, Z. Bao, "Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors Based on an Asymmetric Small-Molecule Semiconductor", IEEE Trans. on Electron Devices, 56(2), 176-185, 2009.
  6. L. Geng, B. Magyari-K‥ope, Z. Zhang, Y. Nishi, "Fermi level unpinning and Schottky barrier modification by Ti, Sc and V incorporation at NiSi2/Si interface",Chinese Physics Letters 26, 037306, 2009.
  7. J.R. Jameson, G.I. Meijer, S.F. Karg, and Y. Nishi, "H as the origin of field-programmable rectification in nonvolatile TiO2 memory devices," to be submitted to Phys. Rev. Lett. (2009)
  8. S-L Chen, J. Lu, G. Shambat, H. Y. Yu, K. Saraswat, J. Vuckovic and Y. Nishi.," Room Temperature 1.6um Electroluminescence from Ge Light Emitting Diode on Si Substrate" Optics Express, vol. 17, 10024 (2009)
  9. Y. Gong, J. Lu, S. Cheng, Y. Nishi, and J. Vuckovic, "Plasmonic Enhancement of Emission from Si-nanocrsytals", Appl. Phys. Lett. 94, 013106 (2009)
  10. Z. Liu, J. H. Oh, M. E. Roberts, P. Wei, B. C. Paul, M. Okajima, Y. Nishi, and Z. Bao, "Solution-Processed Flexible Organic Transistors Showing Very-Low Subthreshold Slope with a Bilayer Polymeric Dielectric on Plastic", Applied Physics Letters, 94 (20), 203301 (2009) [Cover Article; Top 5 most downloaded APL papers in May 2009]
  11. H. A. Becerril, M. E. Roberts, Z. Liu, J. Locklin, and Z. Bao, "High-Performance Organic Thin-Film Transistors through Solution-Sheared Deposition of Small-Molecule Organic Semiconductors", Advanced Materials, 20(13), 2588-2594 (2008)
  12. Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi and Z. Bao, "High-Performance Air-Stable Solution Processed Organic Transistors", Proceedings of 66th IEEE Annual Device Research Conference (DRC), 239-240 (2008)

Conference Presentations

  1. D. Zhang, M.Ferrier, P. Griffin, Y. Nishi, and T. Skotnicki "Ultra High Performance Insulator Channel Transistor", SISPAD 2008 , September, 2008
  2. K. B. Parizi and Y. Nishi, "A Semiconductor Nanobridge Biosensor for Electrical Detection of DNA Hybridization", International SOI Workshop, New York, October, 2008
  3. Z.Liu, Y. Nishi, and Z. Bao,"Performance and Reliability of Organic Transistors Controlled by Interfacial Phenyl-Terminated Self-Assembled Monolayers", MRS Fall meeting, December, 2008, Boston, Mass
  4. Z. Liu, M. C. LeMieux, M. E. Roberts, Y. Nishi, and Z Bao "High-Performance Flexible Thin-Film Transistors based on Solution-Processed Small-Molecule Semiconductors and Self-Sorted Carbon Nanotube Networks" 8th Annual Flexible Electronics and Displays Conference, February, 2009, Phoenix, AZ
  5. K. B. Parizi and Y. Nishi, "A Semiconductor Nanobridge Biosensor for Electrical Detection of DNA Hybridization", IEEE International SOI Workshop, October, 2008, Shawangung Mountains, NY.
  6. Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi,"First-principles study of resistance switching in rutile TiO2 with oxygen vacancy" Nonvolatile Memory Technology Workshop, November, 2008, Monterey, CA
  7. Xiao Zhang*, Melody Grubbs**, Michael Deal*, Bruce Clemens**, Yoshio Nishi*,"Variability of Metal Grain Orientation and the Effects on Electrical Characteristics of Nanoscale MOSFETs", MRS Spring meeting, April, 2009, San Francisco,CA.
  8. Z. Liu, J.H. Oh, M.E. Roberts, P. Wei, B. Paul, M. Okajima, Y. Nishi, Z. Bao, "Solution Processed Organic Transistors Showing Very Low Subthreshold Slope on Organic", MRS Spring meeting, April 2009, San Francisco, CA
  9. Gaurav Thareja, Xiao Zhang, Szu-lin Cheng, Masaharu Kobayashi, Yoshio Nishi "X-Ray Diffraction and Raman Analysis of Thin Compressive Strained Epitaxial Germanium on Different Orientations of Silicon", Material Research Society (MRS) Spring Meeting, San Francisco, CA, April 13-17, 2009.
  10. Gaurav Thareja, Rishi Kant, Roger Howe, Yoshio Nishi "Structural Transformation of Silicon due to Hydrogen Ambient during Germanium Epitaxy on Silicon Nano-pillars", MRS Spring Meeting, San Francisco, CA, April 13-17, 2009.
  11. Eunji Kim, Gaurav Thareja, Krishna C. Saraswat, Paul C. McIntyre, Yoshio Nishi, "Correlation between Inelastic Electron Tunneling Spectroscopy and Electrical Measurements of Ultra-thin High Density Plasma Gate Oxides for MOS devices", MRS Spring Meeting, San Francisco, CA, April 13-17, 2009.
  12. B. Magyari-Kope, E. Cockayne and Y. Nishi, "Ab initio modeling of interfacial oxygen defects in ultrathin high-k gate dielectric stacks", American Physical Society (APS) March Meeting, Pittsburgh, USA
  13. B. Magyari-Kope, E. Cockayne and Y. Nishi, "Defect assisted electron tunneling through ultrathin high-k gate dielectric stacks", Materials Research Society (MRS) Spring Meeting, San Francisco, USA.
  14. E. Cockayne, B. Magyari-Kope, and Y. Nishi, "Effect of oxygen vacancies and interfacial oxygen concentration on local structure and band offsets in a model metal-HfO2-SiO2-Si gate stack", Materials Research Society (MRS) Spring Meeting, San Francisco, USA.
  15. K. Sakata, B. Magyari-Kope, Y. Nishi, and T. Homma, "Reaction mechanism of halogen species with strained Ge surface studied by DFT modeling", 76th Annual Meeting of the Electrochemical Society of Japan, Kyoto, Japan, 2009.
  16. S.G. Park, B. Magyari-Kope, and Y. Nishi, "Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations", MRS Spring meeting, San Francisco, USA, April, 2009.
  17. K. B. Parizi, Y. Nishi, "An Internally Amplified Signal SOI Nano-bridge Biosensor for Electrical Detection of DNA Hybridization" accepted in IEEE INTERNATIONAL SOI CONFERENCE, 2009.
  18. Xiao Zhang, Melody Grubbs, Michael Deal, Bruce Clemens, Yoshio Nishi "Variability of Metal Grain Orientation and the Effects on Electrical Characteristics of Nanoscale MOSFETs", , MRS spring Meeting, Oral Presentation, April 14, 2009, San Francisco
  19. Xiao Zhang, Mike Deal, Yoshio Nishi, "New Universal Physical Model for the Recoverable Part of NBTI Degradation"the 67th Annual Device Research Conference, Oral Presentation, June 22-24, 2009, Penn State University, University Park, PA
  20. Z. Liu, M. Kobayashi, B. C. Paul, Z. Bao, and Y. Nishi, "Fermi-Level Depinning at Metal-Organic Semiconductor Interface for Low-Resistance Ohmic Contacts", IEEE International Electron Devices Meeting (IEDM 2009),accepted (2009)
  21. Xiao Zhang, Jing Li, Melody Grubbs, Mike Deal, Blanka Magyari-Kope, Bruce Clemens, Yoshio Nishi,, "Physical Model of the Impact of Metal Grain Work Function Variability on Emerging Dual Metal Gate MOSFETs and its Implication for SRAM Reliability", IEEE International Electron Devices Meeting (IEDM 2009),accepted (2009)

Year 2007

Refereed Journal Publications

  1. S. Kim, Y. Zhang, J. McVittie, H. Jagannathan, Y. Nishi, H.-S. P. Wong, "Integrating Phase Change Memory Cell with Ge Nanowire Diode for Cross-Point Memory – Experimental Demonstration and Analysis," IEEE Trans. Electron Devices, vol. 55, pp.2307, September, 2008.
  2. Jia Feng, Gaurav Thareja, Masaharu Kobayashi, Shulu Chen, Andrew Poon, Yun Bai, Peter B. Griffin, Simon S. Wong, Yoshio Nishi, and James D. Plummer,"High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD Al2O3 Gate Dielectric and Self-Aligned NiGe Contacts", IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 7, July (2008)
  3. P. T. Chen, B. B. Triplett, P.C. McIntyre, Y. Nishi, et al., " Analysis of Electrically Biased Paramagnetic Defect Centers in HfO2 and HfxSi1-xO2/(100)Si Interfaces", Journal of Applied Physics (JAP), 104, 014106 (2008)
  4. P. T. Chen, Y. Sun, E. Kim, P.C. McIntyre, P. Pianetta, Y. Nishi, et al.," HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition", Journal of Applied Physics (JAP), 103 , 034106 (2008).
  5. B. B. Triplett, P. T. Chen, Y. Nishi, et al, "Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1-x high-k dielectrics on Si" , Journal of Applied Physics (JAP), 101, 013703 (2007)
  6. B. C. Paul, R. Tu, S. Fujita, M. Okajima, T. Lee, and Y. Nishi, "A Circuit Compatible Analytical Device Model for Nanowire FET," in IEEE Trans. on Electron Devices (TED), vol. 54, n 7, pp. 1637-1644, July, 2007.
  7. B. C. Paul, S. Fujita, M. Okajima, T. Lee, H. S. P. Wong, and Y. Nishi, "Impact of Process Variation on Nanowire and Nanotube Device Performance," in IEEE Trans. on Electron Devices, vol. 54, n 9, pp. 2369-2376, September, 2007.
  8. B. C. Paul, R. Tu, S. Fujita, M. Okajima, Y. Nishi, and T. Lee, "A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport," in NANOTECH, vol. 3, pp. 692-695, 2007.
  9. B. C. Paul, S. Fujita, M. Okajima, T. Lee, H. S. P. Wong, and Y. Nishi, "Impact of process variation on Nanowire and Nanotube Circuit Performance,"in DRC, pp. 269-270, 2007.
  10. Li Geng, Blanka Magyari-Kope, Zhiyong Zhang, and Yoshio Nishi, Ab initio Modeling of Schottky Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface, IEEE Electron Device Letters, 2008, accepted for publication.
  11. Blanka Magyari-Kope, Seongjun Park, Luigi Colombo, Yoshio Nishi, and Kyeongjae Cho, First Principles Study of Effective Work Function Modulation on SiO2, to be submitted to Journal of Applied Physics.
  12. Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi and Z. Bao, "High Performance Air-Stable Solution Processed Organic Field Effect Transistors based on an Asymmetric Oligothiophene", Applied Physics Letters, in preparation.
  13. H. A. Becerril, M. E. Roberts, Z. Liu, J. Locklin and Z. Bao, "High-Performance Organic Thin Film Transistors through Solution Sheared Deposition of Small Molecule Organic Semiconductors", Advanced Materials, 2008, accepted (in press).
  14. D. Akinwande, Y. Nishi and H.-S.P. Wong, "An Analytical Derivation of the Density of States, Effective Mass, and Carrier Density for Achiral Carbon Nanotubes", IEEE Trans. Electron Devices, vol.55, pp.289, January, 2008
  15. H.R.Gong, Y. Nishi and K. Cho,"Effects of Strain and Interface on Work Function of a Nb-W Metal Gate Systems", Appl. Phys. Letters, Vol 91, 242105 (2007)

Conference Presentations

  1. M. Kobayashi, P. T. Chen, S. Sun, N. Goel, M. Garner, W. Tsai, P. Pianetta, and Y. Nishi, "Interface analysis between ALD high-k HfO2 and InGaAs, InAlAs -Synchrotron Radiation Photoemission Spectroscopic Study (SRPES) on Interfacial, Self-Cleaning in ALD Deposition" Solid State Devices and Materials Conference, September, 2008, Tsukuba, Japan.
  2. Masaharu Kobayashi, Atsuhiro Kinoshita, Krishna Saraswat, H. -S. Philip Wong and Yoshio Nishi,"Fermi-Level Depinning in Metal/Ge Schottky Junction and Its Application to Metal Source/Drain Ge NMOSFET" Symposium on VLSI Technology, 2008, session 6.2, Tuesday, June 17, 3:50 p.m., Hawaii, USA
  3. Masaharu Kobayashi, Po-Ta Chen, Steven Sun, Niti Goel, Mike Garner, Wilman Tsai, Piero Pianetta and Yoshio Nishi,"Interface analysis between ALD high-k HfO2 and InGaAs, InAlAs",European Materials Research Society, 2008, session 14.5, May 30, 11:00 a.m., Strasbourg, France
  4. Masaharu Kobayashi, Atsuhiro Kinoshita, Krishna Saraswat, H. -S. Philip Wong and Yoshio Nishi,"Novel Metal/Ge Contact Technology for Metal Source/Drain Ge Transistor Application",the 214th ECS Meeting, 2008
  5. P. T. Chen, B. B. Triplett, Y. Nishi, J. Chambers, et al., "Effect of electrical bias on paramagnetic defects at high-k (HfO2)x(SiO2)1-x on (100)Si, 38th Semiconductor Interface Specialists Conference (SISC), Washington D.C., p.1 (2007).
  6. P. T. Chen, B. B. Triplett, Y. Nishi, et al., "Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1-x high-k dielectrics on Si", Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, p.53 (2007).
  7. P. T. Chen, Y. Sun, P.C. McIntyre, P. Pianetta, Y. Nishi, et al., "Interface analysis Between ALD high-k HfO2 and sulfur passivated GaAs", Mat. Res. Soc. Symp., H4.3, San Francisco, USA, Spring (2007)
  8. Blanka Magyari-Kope, Yoshio Nishi, and Kyeongjae Cho, Effective Work Function Control by Metal-Oxide Interface Characteristics, MRS, Spring Meeting, San Francisco, 2008.
  9. Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi and Z. Bao, "High-Performance Air-Stable Solution Processed Organic Transistors", Oral Presentation, 66th Annual Device Research Conference (DRC), Santa Barbara, CA, Jun. 23-25, 2008.
  10. Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi and Z. Bao, "High-mobility Air-stable Solution-Shear-Processed Organic Transistors based on an Asymmetric Small Molecule for Flexible Electronic Applications", Oral Presentation, Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Mar. 24-28, 2008. (won First-Prize "Science as Art" Award)
  11. Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi and Z. Bao, "Solution-Processed Organic Transistors and Circuits for Flexible Electronics", CIS AdCom Fall Meeting, Stanford, CA, Nov. 14, 2007.
  12. Sung-Woo Kim and Yoshio Nishi, "Copper sulfide-based resistance change memory", Non-Volatile Memory Technology Symposium, 2007, Albuquerque
  13. Sung-Woo Kim, Oun-Ho Park, Ho-Cheol Kim and Yoshio Nishi, "Cu2-xS nanopillar arrays grown in self-assembled diblock copolymer templates", NMTRI Review Meeting, 2007, Stanford
  14. Sung-Woo Kim and Yoshio Nishi, "Effects of heat treatment on switching properties of copper sulfide", NMTRI Review Meeting, 2007, Stanford
  15. Gaurav Thareja, Masaharu Kobayashi, Yasuhiro Oshima, James McVittie, Peter Griffin and Yoshio Nishi, "Low Dit optimized Interfacial Layer using High-Density Plasma Oxidation and Nitridation in Germanium High-k Gate stack", Device Research Conference, 2008

Year 2006

Invited Papers

  1. T. Krishnamohan, Z. Krivokapic, K.Uchida, Y.Nishi, and K.Saraswat, "High-Mobility Ultrathin Strained Ge MOSFETs on Bulk and SOI with Low Band-to-Band Tunneling Leakage: Experiments," IEEE Trans. Electron Devices, 53, 990-999, 2006
  2. T. Krishnamohan, D. Kim, C.D. Nguyen, C. Jungemann, Y. Nishi, and K. Saraswat, "High Mobility Low Band-to-Band Tunneling Strained Germanium Double gate Heterostructure FETs: Simulations", IEEE Trans. Electron Devices, 53, 1000-1009, 2006

Plenary/Invited Presentations

  1. Yoshio Nishi, "Current Trends and Status of Nanoelectronic Devices"2005 SINANO Workshop, September, 2005, Grenoble, France
  2. Yoshio Nishi"Technological Innovations Learned in Integrated Circuits and Nanoelectronics" Innovation Symposium February 4, 2006 AIST, Japan
  3. Yoshio Nishi, "Nanoelectronic Materials and Processes, National Nanotechnology Infrastructure Network and Nanomanufacturing "ERC/SRC Review, University of Arizona, Tucson, AZ, Feb.23-24,2006
  4. Yoshio Nishi,"Nanoelectronic Materials and Devices as New Opportunity"2006 IEEE NMDC, October 23-25, 2006, Geyongju, Korea
  5. Yoshio Nishi, "Scaling Limit of Silicon and non-Silicon Opportunities" FTM 2006 Workshop, June 26-30, 2006, Crete, Greece
  6. Yoshio Nishi, " Challenges of Nanoelectronic Devices and Materials" 2005 Symposium on Nanoscale Materials, Processes and Devices, November 3-4, 2005, Hapuna Beach Prince Hotel, Hawaii
  7. Yoshio Nishi, "Semiconductor Technology, Past, Present and Future" ISESH2005, September, 2005, Portland, Oregon
  8. Paul McIntyre and Yoshio Nishi, "Ferroelectric Nonvolatile Memories: Opportunities, Progress and Challenges" The 17th International Symposium on Integrated Ferroelectrics, April, 17, 2006, Shanghai, China
  9. Yoshio Nishi, "Industry-Academia Collaboration for Nanotechnology Research" 2006 Japan NANOET Symposium, February 20,21 Tokyo, Japan
  10. Yoshio Nishi, "Trends in Three Dimensional Integration Research and Development in US" Kumamoto Colloquium, February 2, 2006, Japan
  11. Yoshio Nishi, "Trends of IC Technology Research and Opportunities in Nanoelectronics" Kumamoto Semiconductor Forest Forum, February3, 2006, Japan
  12. Yoshio Nishi, "Nanoelectronic Materials and Devices" Materials Integrity Management Symposium, June 6-7, 2006, Stanford
  13. Yoshio Nishi, "Where Will CMOS Scaling and Non-Silicon Opportunities Go" Nano Korea 2006,August 30-September 1, Kintex, Korea
  14. Yoshio Nishi, "CMOS Scaling and Non-Silicon Opportunities"NanoCMOS Workshop, Jan. 30-Feb.1, 2006 Mishima, Japan
  15. Yoshio Nishi, "Nanoelectronics and its Future" NEC Technology Forum, April 13-14, 2006, Tokyo
  16. Yoshio Nishi,"Silicon Nanoelectronics, Past, Today and Future"2006 Silicon Nanoelectronics Workshop, Hilton Village, Honolulu

Books and Contributions to Books

  1. H. Iwai, Y. Nishi, M.S. Shur and H.Wong, "Frontiers in Electronics" World Scientific, New Jersey, 2006

Refereed Journal Publications

  1. Hemanth Jagannathan, Ho-Cheol Kim, Erik M. Freer, Linnea Sundstrom, Teya Topuria, Philip M. Rice, Michael Deal, Yoshio Nishi, "Templated Germanium Nanowire Synthesis using Oriented Mesoporous Organosilicate Thin Films," Journal of Vacuum Science and Technology B 24(5) 2220, 2006.
  2. Hemanth Jagannathan, Jacob Woodruff, Michael Deal, Paul C. McIntyre, Christopher Chidsey, Yoshio Nishi, "Nature of Germanium Nanowire Heteroepitaxy on Silicon Substrates," Journal of Applied Physics 100, 024318, 2006.
  3. Hemanth Jagannathan, Yoshio Nishi, Mark Reuter, Matthew Copel, Emanuel Tutuc, and Supratik Guha, "Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires," Applied Physics Letters, Vol. 88, 2005.
  4. Maria Makarova, Jelena Vuckovic, Hiroyuki Sanda, and Yoshio Nishi, " Silicon-based photonic crystal nanocavity light emitters" Appl. Phys. Lett. 89, 221101 (2006)
  5. Seongjun Park, Blanka Magyari-Kope, Luigi Colombo, Yoshio Nishi, and Kyeongjae Cho, First Principles Study of Al-Ni Bi-layer Work Function on SiO2, submitted to Journal of Applied Physics, December, 2006.
  6. J.R. Jameson, Y. Fukuzumi, K. Tsunoda, P.B. Griffin, and Y. Nishi, "Observation of field-programmable rectification in rutile TiO2 crystals,"submitted to Applied Physics Letters (2006)
  7. K. Tsunoda, Y. Fukuzumi, P.B. Griffin, Z. Wang, J.R. Jameson, and Y. Nishi, "Bipolar resistive switching in polycrystalline TiO2 films,"submitted to Applied Physics Letters (2006)
  8. B. B. Triplett, P. T. Chen, Y. Nishi, P.H. Kasai, J. J. Chambers and L. Colombo, "Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1-x high-k dielectrics on Si", Journal of Applied Physics, Vol.100, 2006
  9. Kim, W; Javey, A; Tu, R; Cao, J; Wang, Q; Dai, HJ, " Electrical contacts to carbon nanotubes down to 1 nm in diameter" Applied Phys. Letters; Oct. 24 2005; v.87, no.17, p.173101
  10. Zhang, L; Tu, R; Dai HJ, "Parallel Core-Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors", Nano Letters, in press
  11. J.R. Jameson, P.B. Griffin, J.D. Plummer, and Y. Nishi, "Charge trapping in high-k gate stacks due to the bilayer structure itself" IEEE Transactions on Electron Devices 16 (53), 1858-1867 (2006)
  12. J.R. Jameson, W. Harrison, P.B. Griffin, J.D. Plummer, and Y. Nishi, "A Semiclassical Model of Dielectric Relaxation in Glasses," Journal of Applied Physics 100, 1 (2006)
  13. Zheng Wang, Peter B. Griffin, Jim McVittie, Simon Wong, Paul C. McIntyre, and Yoshio Nishi, "Resistive Switching Mechanism in ZnxCd1-xS Nonvolatile Memory Devices" IEEE Electron Device Letters 28 (2007), January.

Conference Presentations

  1. J.R. Jameson, Y. Fukuzumi, H.-C. Kim, and Y. Nishi,O3.2 "Resistance-change memory from nanoscale volumes of metal sulfides fabricated using self-assembled di-block copolymers," to be presented at 2006 Materials Research Society Fall Meeting, November 27-31, Boston, MA, USA
  2. J.R. Jameson and Y. Nishi, "Charge trapping in high-k gate stacks due to the bilayer structure itself," 2006 IEEE International Integrated Reliability Workshop, October 16-19, Fallen Leaf Lake, CA, USA (poster)
  3. P.T. Chen, B. B. Triplett, Y. Nishi, P.H. Kasai, J. J. Chambers and L. Colombo, "Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1-x high-k dielectrics on Si", 37th Semiconductor Interface Specialists Conference (SISC), San Diego, California, USA, December 2006
  4. H. Sanda, J. McVittie, M. Koto, K. Yamagata, T. Yonehara, Y. Nishi, "Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer", IEDM 2005, Dec. 2005, 679 - 682, Washington D.C.
  5. M. Makarova, J. Vuckovic, H. Sanda, Y. Nishi, "Two-Dimensional Porous Silicon Photonic Crystal Light Emitters", CLEO 2006, June. 2006, Long Beach
  6. New Uses of ESR for Nanoelectronic Materials, Interfaces, and Devices. Baylor Triplett, Peter Peumans, and Yoshio Nishi (invited), 48th Rocky Mountain Conference on Analytical Chemistry, Breckenridge, Colorado, USA, July 2006
  7. Blanka Magyari-Kope, Seongjun Park, Luigi Colombo, Yoshio Nishi, and Kyeongjae Cho, Theoretical Investigation of Metal Work Functions on SiO2 Gate Dielectric, 3rd International Symposium on Advanced Gate Stack Technology, Austin, Texas, September 27-29, 2006.
  8. Jacob Huffman Woodruff, Joshua Ratchford, Hemanth Jagannathan, Yoshio Nishi and Christopher Chidsey, "Deterministic Nanowire Growth" MRS Fall Meeting, Boston, November, 2006.
  9. Hemanth Jagannathan, Jungyup Kim, Michael Deal, Michael Kelly, Yoshio Nishi, "Halide Passivation of Germanium Nanowires," ECS Transactions, Volume 3, Issue 7, pp. 1175-1180, 2006.
  10. Hemanth Jagannathan, Jacob Woodruff, Michael Deal, Paul McIntyre, Christopher Chidsey & Yoshio Nishi, "Nucleation and Growth of Hetero-Epitaxial Germanium Nanowires," Conference on Crystal Growth and Epitaxy, June 2006.
  11. Hemanth Jagannathan, Ho-Cheol Kim, Erik M. Freer, Linnea Sundstrom, Teya Topuria, Philip M. Rice, Michael Deal, Yoshio Nishi, "Low Temperature Template Synthesis of Germanium Nanowires for 3-D Integration," Silicon Nanoelectronics Workshop, June 2006.
  12. Hemanth Jagannathan, Jacob Woodruff, Michael Deal, Paul McIntyre, Christopher Chidsey & Yoshio Nishi, "Controlled Hetero-Epitaxial Synthesis of Germanium Nanowires on Silicon Substrates," 2005 Symposium on Nanoscale Materials, Processes and Devices, December 2005.
  13. J. Woodruff, J. Ratchford, H. Jagannathan, H. Adhikari, H.-S.P. Wong, C.E.D. Chidsey, "Deterministic Nanowire Growth," SRC Techcon, October 2005.
  14. H. Jagannathan, H. Kim, M. Deal, P. C. McIntyre and Y. Nishi, "Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates," Solid State Devices and Materials, Kobe, Japan, September 2005.
  15. Hemanth Jagannathan, Hyoungsub Kim, Michael Deal, H.-S. Philip Wong, Paul McIntyre, Christopher Chidsey & Yoshio Nishi, "Low Temperature Heteroepitaxial Synthesis and Control of Germanium Nanowires on Silicon Substrates," First Internatioanl Nanotechnology Conference on Communication and Cooperation, June 2005.
  16. Rong Chen, David W. Porter, Hyoungsub Kim, Paul C. McIntyre, Hemanth Jagannathan, Yoshi Nishi and Stacey F. Bent, "Area-Selective Atomic Layer Deposition for in-situ Gate Stack," MRS Conference, March 2005.
  17. S. -W. Kim, P. Griffin, H. -S. Wong, S. Wong, P. McIntyre, and Y. Nishi, "Cu2S-Based Conductance Bridge Memory", in NMTRI, May, 2006.
  18. S. -W. Kim, O. -H. Park, J. Jameson, P. Griffin, H. -C. Kim, and Y. Nishi, "Block Copolymer Templates for Nanopatterning of Cu2S", in NMTRI, Nov. , 2006
  19. J. Jameson, Y. Fukuzumi, H. -C. Kim, J. Cheng, O. -H. Park, S. -W. Kim, and Y. Nishi, "Resistance-change memory from nanoscale volumes of metal sulfides fabricated using self-assembled di-block copolymers", in MRS, Nov. , 2006, Boston.
  20. C-H. Lu, G. Wong, R. Birringer, M. Deal, B. Clemens, and Y. Nishi, "Work Function Tuning and Device Characteristics of Bilayer Metal Gate Stacks," IEEE 3rd International Symposium on Advanced Gate Stack (ISAGST), Austin, TX, USA, Sep. 27-29, 2006
  21. C-H. Lu, G. Wong, M. Deal, B. Clemens, and Y. Nishi, "Thermal Stability and Device Characteristics of MOSFETS Utilizing Bilayer Metal Gates for Threshold Voltage Control," Mat. Res. Soc. Symp., E8.3, San Francisco, USA, Apr. 17-21, 2006.
  22. G. M. T. Wong, C-H. Lu, M. Deal, Y. Nishi, and B. M. Clemens, " Work Function Behavior of Nb-W and Ti-W Bilayer Metal Gates via Physical Characterization and Diffusion Modeling", IEEE 3rd International Symposium on Advanced Gate Stack (ISAGST), Austin, TX, USA, Sep. 27-29, 2006
  23. G. Wong, C-H. Lu, M. Deal, Y. Nishi, B. Clemens, "Diffusion Modeling and the Effect of Alloy Composition on Work Function of Metal Gate Electrodes," Mat. Res. Soc. Symp., E8.5, San Francisco, USA, Apr. 17-2, 2006.
  24. J. Kim, J. McVittie, K. Saraswat and Y. Nishi, "Passivation Studies of Germanium Surface", 8th International Symposium on Ultra Clean Processing of Silicon Surfaces, Sep. 18th-20th 2006, Antwerp, Belgium.
  25. J. Kim, J. McVittie, K. Saraswat and Y. Nishi, "Germanium Surface Cleaning with Hydrochloric Acid", ECS Transactions; v.3, no.7, p.1191-1196 (2006), Cancun, Mexico.
  26. H. Jagannathan, J. Kim, M. Deal, M. Kelly, Y. Nishi, "Halide Passivation of Germanium Nanowires", ECS Transactions; v.3, no.7, p.1175-1180 (2006),Cancun, Mexico.
  27. J. Kim, K. Saraswat and Y. Nishi, "Study of germanium surface in wet chemical solutions for surface cleaning applications", ECS Transactions; v.1, no.3, p.214-219 (2005), Los Angeles, CA.

Year 2005

Invited talks by Prof. Yoshio Nishi

  1. "Current Trends and Status of Nanoelectronic Devices"(plenary talk), 2005 Silicon Nanoelectronics, SINANO, Workshop, Grenoble, France, September, 2005.
  2. "CMOS Scaling and Nanoelectronics: New Materials and Processes Beyond Silicon"(plenary talk) Electrochemical Society Meeting, Quebec City, May, 2005.
  3. "Semiconductor Technology, Past, Present and Future"(keynote address) International Semiconductor Environmental Safety and Health Conference, Portland, Oregon, June, 2005.
  4. "Ferroelectric Nonvolatile Memories: Opportunities and Challenges" (plenary talk) 17 th International Symposium on Integrated Ferroelectrics, Shanghai, China, April, 2005.
  5. "Nanoelectronic Materials and Devices, Challenges and Opportunities"(keynote address) STM 2005, Hokkaido, Japan, July, 2005.
  6. "Nanoscale Science and Engineering, What is it and where can it contribute" (public lecture), City of Sapporo, Hokkaido, Japan, July, 2005.
  7. "Nanoelectronics Research Trends and National Nanotechnology Infrastructure Network" (plenary talk), Workshop of Future of Electronics", WOFE, Aruba, December, 2004.
  8. "CMOS Scaling and Nanoelectronics Era" (keynote address) InterPACK, San Francisco , July 2005.
  9. "Challenges of Nanoelectronic Devices and Materials" 2005 Symposium on Nanoscale Materials and Processes, Hawaii, November 2005.
  10. "CMOS Scaling Limits and Nanoelectronic Materials and Devices" IEEE EDS Boise Distinguished Lecture Series, August 2005.
  11. "Nanotechnology and its Implication to Semiconductor Devices" 43 rd Planarization CMP and Application Technology Meeting, Tokyo , April 2005.
  12. "Evolution in Academia-Industry Collaborative System in Nanotechnology Era" ASMeW Symposium, Waseda Univ. , Tokyo , March 2005.
  13. "CMOS Scaling Limits and Nanoelectronic Devices" IEEE Distinguished Lecture Series, Santa Clara, CA, April, 2005.
  14. "Stanford Nanofabrication Facility in National Nanotechnology Infrastructure Network" IEEE South Bay Nanotechnology Conference, March 2005.

Students papers and Conference presentations

  1. H. Jagannathan, J. Woodruff, M. Deal, P. C. McIntyre, C. Chidsey, Y. Nishi, "Nature of Germanium Nanowire Heteroepitaxy on Silicon Substrates," (Under review).
  2. H. Jagannathan, H. C. Kim, E. M. Freer, L. Sundstrom, T. Topuria, P. M. Rice, M. Deal, Y. Nishi, "Templated Germanium Nanowire Synthesis using Oriented Mesoporous Organosilicate Thin Films," (Under review).
  3. H. Jagannathan, Y. Nishi, M. Reuter, M. Copel, E. Tutuc, and S. Guha, "Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires," Applied Physics Letters, Vol. 88, 2006.
  4. Y. Lu, S. Bangsaruntip, X. Wang, L. Zhang, Y. Nishi, and H. Dai* "DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High K Dielectrics for Nanotube Transistors with 60 mV/Decade Switching " Journal of the American Chemical Society, Vol. 128  No. 11, 2006, page 3518-3519.
  5. H. Sanda, J. McVittie, M. Koto, T. Yonehara, and Y. Nishi, "Fabrication and characterization of NMOS transistors on porous silicon for a novel device layer transfer", IMFEDK05, Kyoto , Japan April 2005.
  6. H. Sanda, J. McVittie, M. Koto, K. Yamagata, T. Yonehara, Y. Nishi, "Fabrication and characterization of CMOS transistors on porous silicon for novel device layer transfer", 2005 IEDM Technical Digest , Washington DC, USA, December 2005.
  7. H. Jagannathan, H. C. Kim, E. M. Freer, L. Sundstrom, T. Topuria, P. M. Rice, M. Deal, Y. Nishi, "Low Temperature Template Synthesis of Germanium Nanowires for 3-D Integration," (To be presented at the Silicon Nanoelectronics Workshop, June 2006).
  8. H. Jagannathan, J. Woodruff, M. Deal, P. McIntyre, C. Chidsey & Y. Nishi, "Controlled Hetero-Epitaxial Synthesis of Germanium Nanowires on Silicon Substrates," 2005 Symposium on Nanoscale Materials, Processes and Devices, December 2005.
  9. J. Woodruff, J. Ratchford, H. Jagannathan, H. Adhikari, H.-S.P. Wong, C.E.D. Chidsey, "Deterministic Nanowire Growth," SRC Techcon, October 2005.
  10. H. Jagannathan, H. Kim, M. Deal, P. C. McIntyre and Y. Nishi, "Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates," Solid State Devices and Materials, Kobe, Japan, September 2005.
  11. H. Jagannathan, H. Kim, M. Deal, H.-S.P. Wong, P. McIntyre, C. Chidsey & Y. Nishi, "Low Temperature Heteroepitaxial Synthesis and Control of Germanium Nanowires on Silicon Substrates," First Internatioanl Nanotechnology Conference on Communication and Cooperation, June 2005.
  12. R. Chen, D. W. Porter, H. Kim, P. C. McIntyre, H. Jagannathan, Y. Nishi and S. F. Bent, "Area-Selective Atomic Layer Deposition for in-situ Gate Stack," MRS Conference, March 2005.
  13. C-H Lu, G. M. T. Wong, M. D. Deal, W. Tsai, P. Majhi, C. O. Chui, M. R. Visokay, J. J. Chambers, L. Colombo, B. M. Clemens, and Y. Nishi, " Characteristics and Mechanism of Tunable Work Function Gate Electrodes Using a Bilayer Metal Structure on SiO 2 and HfO 2," IEEE Electron Device letter, vol. 26, no. 7, pp. 445-447, 2005.
  14. C-H. Lu, G. Wong, M. Deal, S. Hung, S. Park, P. Majhi, W. Tsai, P. McIntyre, B. Clemens, and Y. Nishi, " Bilayer Metal Structure for Tunable Workfunction Gate Electrodes," Mat. Res. Soc. Symp., San Francisco, Spring 2005.
  15. G. Wong, C-H Lu, M. Deal, B. Clemens, Y. Nishi, M. Visokay, J. Chambers , and L. Colombo, " Determination of minimum layer thickness needed to change the work function in a metal bilayer MOS structure," Mat. Res. Soc. Symp., San Francisco, Spring 2005.
  16. S. C. H. Hung, K. Ahmed, C. Olsen, R. Wong, F. Wu, N. Krishna, G. Miner, C-H. Lu, M. Deal and Y. Nishi, " Improved Workfunction Tunability and EOT Control with Clustered ALD TaN/PVD Ta for Multilayer Metal Gate," Mat. Res. Soc. Symp., San Francisco, Spring 2005.
  17. A. K. Chao, P. Kapur, R. S. Shenoy, Y. Nishi, and K.C. Saraswat, "Incorporation of Supply Voltage and Process Variations in the Power Optimization for Future Transistors", Device Research Conference, Santa Babara, CA, 2005.
  18. E. Morifuji, P. Kapur, A. K. Chao, and Y. Nishi, "New Constraint for Vth Optimization for Sub 32nm Node CMOS Gate Scaling," 2005 IEDM Technical Digest.
  19. A. K. Chao, P. Kapur, and Y. Nishi, "Electro-Thermally Coupled Global Power Optimization for Future Transistors", Design Automation Conference, 2006. (Submitted)
  20. K. Uchida, T. Krishnamohan, K.Saraswat and Y. Nishi, "Physical Mechanisms of Electron Mobility Enhancement in Uniaxial Stressed MOSFETs and Impact of Uniaxial Stress Engineering in Ballistic Regime" 2005 IEDM Technical Digest pp.135.
  21. A. Pethe, T. Krishnamohan, D. Kim, S. Oh, H.S. P. Wong, Y. Nishi and K. Saraswat, "Investigation of the Performance limits of III-V Double-Gate n-MOSFETs" 2005 Technical Digest pp.619.
  22. T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi and K. Saraswat, "Low Defect Ultra-thin Fully Strained-Ge MOSFET on Relaxed Si with High Mobility and Low Band-to-Band Tunneling" 2005 Symposium on VLSI Technology, Kyoto , Japan , June 2005.
  23. G. Zhang, D. Mann, Li Zhang, A. Javey, Y. Li, E. Yenilmez, Q. Wang, J. McVitti, Y. Nishi, J. Gibbons, H. Dai,"Ultra-High-Yield Growth of Vertical Single-Walled Carbon nanotubes: Hidden Roles of Hydrogen and Oxygen" PNAS 102 16141, 2005.
  24. J. Kim, J. McVittie, T. Homma, K. Saraswat and Y. Nishi, "Nanoscopic Charaterization of Ge Single Crystal Surfaces to Develop Environmentally Benign Chemical Treatment for Manufacturing Ge-Based Devies", ERC Review 2005 Poster, Feb 05, Tucson, Arizona.
  25. J. Kim, K. Saraswat and Y. Nishi, "Study of germanium surface in wet chemical solutions for surface cleaning applications", ECS Transactions; 2005; v.1, no.3, p.214-219 (2005).
  26. A. Javey, R. Tu, D.B. Farmer, J.Guo, R.G. Gordon, H. Dai, "High performance n-type carbon nanotube field-effect transistors with chemically doped contacts" Nano Letters; Feb. 2005; vol.5, no.2, p.345-8.
  27. W. Kim, A. Javey, R. Tu, J. Cao, Q. Wang, H. Dai, "Electrical contacts to carbon nanotubes down to 1 nm in diameter" Applied Physics Letters; Oct 24 2005; v.87, no.17, p.1-3.
  28. Y.M. Li, S. Peng, D. Mann, J. Cao, R. Tu, K.J. Cho, H. Dai, "On the origin of preferential growth of semiconducting single-walled carbon nanotubes" Journal of Physical Chemistry B; Apr 21 2005; v.109, no.15, p.6968-6971.
  29. D. Wang, R. Tu, L. Zhang, H. Dai, "Deterministic one-to-one synthesis of germanium nanowires and individual gold nanoseed patterning for aligned nanowire arrays" Angewandte Chemie - International Edition; May 6 2005; v.44, no.19, p.2925-2929.

Year 2004

Invited talks by Prof. Yoshio Nishi

  1. ISNM 2004, November 3-5, 2004, KAIST, Korea National Nanotechnology Infrastructure Network, NNIN, and Implications to Nanotechnology Research
  2. 2004 PEUG Symposium, American Vacuum Society, October 15, 2004. Nanoelectronic Materials and Devices beyond CMOS Scaling
  3. IMFEDK 2004, July 26, 2004, Kyoto, Japan. Present and Future of Nanoelectronics Technology Challenges
  4. SRC-NASA Workshop on Novel Materials & Assembly Methods. Practical Requirements and Opportunities for Useful Nanostructures to Extend CMOS Scaling
  5. ICYS 2004, June 1, 2004, Tokyo, Japan. Education/Training/Mentoring and Evaluation of Young Scientists and Engineers in US
  6. International Workshop for Dielectric Thin Films for Future ULSI Devices: Science and Technology, NationalMuseum or Emerging Science and Innovation, Tokyo, May 26, 2004
  7. 6th IEEE/NAETA Annual Conference Semiconductors to Nanotechnology, April 17, 2004, Braun Auditorium, StanfordUniversity. IC Technology, Past, Present and Future, and the Needs for Microelectronics to Nanoelectronics.
  8. ASPRONC 2004, February 4, 2004, Tokyo, Japan. R&D Systems for High Technology Industry. Semiconductor Industry and University Partnership.
  9. Seminar for KumamotoSemiconductorForest, February 2, 2004, Kumamoto. Recent Trends of Semiconductor Industry and Technology Paradigm.
  10. IGNOIE-COE03, January 29-30, 2004, TohokuUniversity. Microelectronics to Nanoelectronics.

     

Books and Contributions to Books

  1. Future Challenges and Needs for Nano-electronics from Manufacturing Viewpoint , John Wiley, New York (2004).

Students papers and Conference presentations

  1. Y. Li, D. Mann, M. Rolandi, W. Kim, A. Ural, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. F. Gibbons, Y. Nishi, and H. Dai, "Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method," Nano Letters, Vol. 4, Issue 2, pp.317-321, February 2004.
  2. K. Uchida, R. Zednik, C-H Lu, H. Jagannathan, J. McVittie, P. McIntyre and Y. Nishi "Experimental Study of Biaxial and Uniaxial Strain Effects on Carrier Mobility in Bulk and Ultrathin-body SOI MOSFET," IEDM 2004.
  3. C. S. Olsen, P. Kraus, K. Ahmed, S. Kher, S. Hung, N. Krishna, C-H. Lu, M. Deal, Y. Nishi: Tunable Workfunction with TaN Metal gate on HfO2-HfSiO Dielectrics, 2004 MRS, San Francisco.
  4. P. Kapur, R.S. Shenoy, A.K. Chao, Y. Nishi, and K.C. Saraswat, "Power Optimization for Future Transistors and A Resulting Global Comparison Standard," IEDM, 2004.

Year 2003

  1. S. Hung, J. Hoyt, J. Gibbons, C-H Lu, M. Deal and Y Nishi: Multilayer Metallic gate electrode for Depletion Suppression and Tunable Workfunction, 2003 SISC, Washington, DC.
  2. Y. Nishi, "Nano-Scale Manufacturing, Challenges for Cost and Reproducibility," Japan-US Nanotechnology Symposium, January 22-24, 2003, Cornell University.
  3. Y. Nishi, "Future of Integrated Circuits Technology for the Internet Era," SASIMI, The 11th Workshop on Synthesis and System Integration of Mixed Information Technologies, April 3, 2003 , Hiroshima University , Japan.
  4. Y. Nishi, "Future Challenges and Needs for Nano-Electronics from Manufacturing View Point," First International Symposium on Nano-Manufacturing, MIT, April 24-26, 2003.
  5. Y. Nishi, "Microelectronics to Nanoelectronics," Stanford Summer Course for Nanotechnology, August 20, 2003.
  6. Y. Nishi, "Micro/Nanoelectronics, Past, Today and Future," 2003 VMIC, September 23, 2003 , Marina del Rey.
  7. Y. Nishi, "Microelectronics to Nanoelectronics," IEEE EDS Santa Clara Valley Chapter Meeting, October 4, 2003.
  8. Y. Nishi, "CMOS Scaling Limits and Opportunity for Nanoelectronics," Advanced Metallization Conference, October 21, 2003 , Montreal , Canada.
  9. Y. Nishi, "A Thought for Industry-Academia Collaboration for Nanotechnology Research and Productization," Science & Engineering Policy Seminar, October 26, 2003, Ministry of Education, Japan
  10. Y. Nishi, "CMOS Scaling Limits and Opportunity for Nanoelectronics," AVS 50th Anniversary Conference, November 3-6, 2003 , Baltimore, MD.
  11. Steven C. H. Hung, Judy Hoyt, James Gibbons, Ching-Huang Lu, Mike Deal and Yoshio Nishi, "Multilayer Metallic Gate Electrode for Depletion Suppression and Tunable Workfunction," 2003 Semiconductor Interface Specialists Conference, Washington, D.C., December 2003.
  12. Y. Nishi, "Technology Roadmap and Beyond," 2003 International Microprocesses and Nanotechnology Conference, MNC, 2003.

Year2001

  1. R. R. Doering and Y. Nishi, "Limits of Integrated-Circuit Manufacturing," Special Issue on Limits of Semiconductor Technology, Proc. of the IEEE, Vol. 89, pp. 375-393, March 2001.

Year 1999

  1. 1. Y. Nishi and J. W. McPherson, "Impact of New Materials, Changes in Physics and Continued ULSI Scaling on Failure Mechanisms and Analysis," (invited) Proc. of 7th Int’l Symposium on Physical and Failure Analysis of Integrated Circuits, pp. 1-8, July 1999.

Year 1998

  1. Y. Nishi, " Surface States and Device Performance," (invited) Proc. 8th International Symposium on Silicon Materials Science and Technology, vol. 1, pp301-318, May 1998.

Pre 1998

  1. Y. Nishi, "Silicon-Based IC Technology for Giga-Scale Integration Era" (plenary invited), Proc. International Conference on Solid State Devices and Materials, pp. 4-5, September 1997.
  2. J. P. Snyder, Y. Nishi and C. R. Helms, "Experimental Investigation of a PtSi Source and Drain Field Emission Transistor," Appl. Physics Letters, vol. 67, pp. 1420-1422, 1995.
  3. T. A. Schreyer, Y. Nishi and K. C. Saraswat, "Simulation and Measurement of Picosecond Step Responses in VLSI Interconnections," IEDM Technical Digest , pp. 344-347, 1988.
  4. Y. Nishi, K. Taniguchi and J. Matsunaga, "Technology and Modeling for MOS IC/VLSIs," (invited), Physica, vol. 129 B, Solid State Devices, pp. 16-32, September 1984.
  5. Y. Nishi, "Silicon on Sapphire Technology," (invited), European Solid State Circuits Conference 1976, pp. 89-116, September 1976.
  6. Y. Nishi, K. Tanaka and A. Ohwada, "Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II," Japan. J. Appl. Phys., vol. 11, pp. 85-91, January 1972.
  7. Y. Nishi, "Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I," Japan. J. Appl. Phys., vol. 10, pp. 52-62, January 1971.
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