Initiative for Nanoscale Materials and Processes, INMP (Industry Group)

Principal Investigators: Yoshio Nishi, Philip Wong(EE), Paul McIntyre (MSE), Krishna Saraswat (EE), Bruce Clemens (MSE)

Nishi group for this Initiative includes metal gate work function engineering and quantum confined transport for ultra-thin body MOSFET on SOI/GeOI. This project is aimed at fundamental understandings of metal gate/high K dielectrics/ high mobility channel structure at atomic/molecular levels to provide in-depth knowledge and discovery for ITRS 45-32nm node CMOS technology and also explore extension beyond 20nm node.

Work function team: Xiao Zhang , Gloria Wong (Clemens), Blanka Magyari-Kope, Mike Deal
High-k team: Joseph Po-Ta Chen , Eunji Kim (McIntyre), Baylor Triplett
Visiting scholars: Yasuhiro Oshima (TEL), Atsuhiro Kinoshita (Toshiba)

Nonvolatile Memory Technology Research Initiative, NMTRI (Industry Group)

Principal Investigator: Yoshio Nishi

Co-Investigators: Paul McIntyre, Krishna Saraswat, Philip Wong, Simon Wong

Main project consists of design/technology group of faculty members from multiple departments. This project pursues nonvolatile memory devices based upon ferroelectrics, phase change materials, conductance bridge/resistant change materials and floating gate with barrier engineering. Also applications of such resistance change devices into logic circuits are investigated.

Conductance bridge/resistance change memory team: Sung Woo Kim, Mihir Tendulkar, John Jameson, Peter Griffin
Visiting scholars: Mitsuru Sato (Toshiba), Jaeyun Yi (Hynix), Rainer Bruchhays (Qimonda), Gwan-Hyeob Koh (Samsung)

III-V Semiconductor MOSFETs (Intel)

Principal investigators: Yoshio Nishi, Paul McIntyre, Philip Wong

This is to explore possibility of III-V semiconductor channel MOSFET for beyond silicon based CMOS era for high speed performance integrated circuits.

Team for high k dielectrics on III-V: Joseph Po-Ta Chen, Steven Sun (Pianetta, SLAC), Masaharu Kobayashi, Eunji Kim, ByungHa Sin (McIntyre), and Baylor Triplett
Visiting scholars: Niti Goel, Mike Garner, Wilman Tsai

Germanium Surface Clean in Environmentally Benign Semiconductor Manufacturing (NSF, SRC, industry) Engineering Research Center

Principal Investigator: Yoshio Nishi

Team: Masaharu Kobayashi, Jim McVittie

This project is aiming at the nature of germanium surface contaminations and cleaning technology for improved performance of germanium based MOS devices with environmentally benign combinations for chemistry and processes.

Device Layer Transfer, DLT, and Photoluminescence from Porous semiconductor(Canon/CISFMA)

Principal Investigator: Yoshio Nishi

Team: Szu-Lin Cheng, Jim McVittie

This project is to utilize ELTRAN technology and pursue feasibility of active device layer to be transferred to another active device layer for three dimensional integration. Photoluminescence from quantum confined nanosilicon in porous semiconductor is explored for possible combination with photonic crystal.  

Cross Point Memory for Novel Functional Circuits (Toshiba/CISFMA)

Principal investigator: Yoshio Nishi

Team: Sung-Woo Kim, Jim McVittIe

This project is aiming at application of resistance change/conductance bridge materials such as ZnCdS and Cu2S for logic circuits which can have programmability for implementation of new functional circuits.

New Emerging Diagnostic Imaging (Canon)

The purpose of this project is to pursue novel device/materials and technology for diagnostic imaging and sensing and explore possibilities for bio-/medical diagnosis.

Principal investigator: Yoshio Nishi

Co-investigators: Butrus Khuri-Yakub, Samira Guccione, Dwight Nishimura, Nick Melosh, Mark Brongersma, Paul McIntyre, Michael McDonald, Omer Oralkan,

BioFETteam: Kozar Baghbari Parizi, Yoshio Nishi

Nanotube/Nanowire Research (Unrestricted Gift Funds)

This project investigates feasibility of nanotube/Nanowire based electronics, starting from growth and characterization of carbon nanotubes and MOSFET, and germanium and silicon nanowire growth by using mainly VLS method and look into physical and electrical characterization of such wires and devices including solar energy conversion devices.

Principal investigator: Yoshio Nishi

Team: Ying Chen, Mike Deal

   
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