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Initiative for Nanoscale Materials and Processes, INMP (Industry Group) Principal Investigators: Yoshio Nishi, Philip Wong(EE), Paul McIntyre (MSE), Krishna Saraswat (EE), Bruce Clemens (MSE) Nishi group for this Initiative includes metal gate work function engineering and quantum confined transport for ultra-thin body MOSFET on SOI/GeOI. This project is aimed at fundamental understandings of metal gate/high K dielectrics/ high mobility channel structure at atomic/molecular levels to provide in-depth knowledge and discovery for ITRS 45-32nm node CMOS technology and also explore extension beyond 20nm node. Work function team: Xiao Zhang , Gloria Wong (Clemens), Blanka Magyari-Kope, Mike Deal Nonvolatile Memory Technology Research Initiative, NMTRI (Industry Group) Principal Investigator: Yoshio Nishi Co-Investigators: Paul McIntyre, Krishna Saraswat, Philip Wong, Simon Wong Main project consists of design/technology group of faculty members from multiple departments. This project pursues nonvolatile memory devices based upon ferroelectrics, phase change materials, conductance bridge/resistant change materials and floating gate with barrier engineering. Also applications of such resistance change devices into logic circuits are investigated. Conductance bridge/resistance change memory
team: Sung Woo Kim, Mihir Tendulkar, John
Jameson, Peter Griffin III-V Semiconductor MOSFETs (Intel) Principal investigators: Yoshio Nishi, Paul McIntyre, Philip Wong This is to explore possibility of III-V semiconductor
channel MOSFET for beyond silicon based CMOS era for high speed
performance integrated circuits. Germanium Surface Clean in Environmentally Benign Semiconductor Manufacturing (NSF, SRC, industry) Engineering Research Center Principal Investigator: Yoshio Nishi Team: Masaharu Kobayashi, Jim McVittie This project is aiming at the nature of germanium surface contaminations and cleaning technology for improved performance of germanium based MOS devices with environmentally benign combinations for chemistry and processes. Device Layer Transfer, DLT, and Photoluminescence from Porous semiconductor(Canon/CISFMA) Principal Investigator: Yoshio Nishi Team: Szu-Lin Cheng, Jim McVittie This project is to utilize ELTRAN technology and pursue feasibility of active device layer to be transferred to another active device layer for three dimensional integration. Photoluminescence from quantum confined nanosilicon in porous semiconductor is explored for possible combination with photonic crystal. Cross Point Memory for Novel Functional Circuits (Toshiba/CISFMA) Principal investigator: Yoshio Nishi Team: Sung-Woo Kim, Jim McVittIe This project is aiming at application of resistance change/conductance bridge materials such as ZnCdS and Cu2S for logic circuits which can have programmability for implementation of new functional circuits. New Emerging Diagnostic Imaging (Canon) The purpose of this project is to pursue novel device/materials and technology for diagnostic imaging and sensing and explore possibilities for bio-/medical diagnosis. Principal investigator: Yoshio Nishi Co-investigators: Butrus Khuri-Yakub, Samira Guccione, Dwight Nishimura, Nick Melosh, Mark Brongersma, Paul McIntyre, Michael McDonald, Omer Oralkan, BioFETteam: Kozar Baghbari Parizi, Yoshio Nishi Nanotube/Nanowire Research (Unrestricted Gift Funds) This project investigates feasibility of nanotube/Nanowire based electronics, starting from growth and characterization of carbon nanotubes and MOSFET, and germanium and silicon nanowire growth by using mainly VLS method and look into physical and electrical characterization of such wires and devices including solar energy conversion devices. Principal investigator: Yoshio Nishi Team: Ying Chen, Mike Deal |
